Bulk traps in silicon-on-sapphire by conductance DLTS

Ko, R.; Brzezinski, D.W.; Forbes, L.; Dell'Oca, C. J.

doi:10.1109/t-ed.1981.20332

Cited by 31 publications

(3 citation statements)

References 8 publications

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“…This connection is similar to that described in Ref. 5. A variable reference resistor is connected to the differential terminals.…”

Section: Methodsmentioning

confidence: 99%

“…It has been shown previously that conductance DLTS is a suitable tool for measuring small-size field-effect transistors (FET5), where the capacitance transient is too weak to be measured.591° In Ref. 5, the small-signal ac channel conductance was used to monitor the change of the threshold voltage, AVIh, associated with emission of the trapped carriers. For calculation of the trap concentration, the surface free carrier mobility is assumed to be constant over the entire experimental temperature range.5 Conductance DLTS was combined later° with C-V measurements and data fitting and the assumptions made in Ref.…”

Section: Introductionmentioning

confidence: 99%

“…For calculation of the trap concentration, the surface free carrier mobility is assumed to be constant over the entire experimental temperature range.5 Conductance DLTS was combined later° with C-V measurements and data fitting and the assumptions made in Ref. 5 were not needed.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A New Voltage Transient Technique for Deep‐Level Studies in Depletion‐Mode Field‐Effect Transistors

Kolev

Deen

Hardy

et al. 1998

J. Electrochem. Soc.

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A new variation of deep-level transient spectroscopy, suitable for depletion-mode field-effect transistors, is presented. It is similar to the conductance deep-level transient spectroscopy but does not require simultaneous measurement of the transconductance or the mobility for calculation of the trap concentrations. It is also independent of the transistor size and is very sensitive. The technique is demonstrated with measurements of radiation-induced traps in buried channel metal-oxide-semiconductor field-effect transistors which are used as output amplifiers in charge-coupled device imagers. The unique structure of these transistors offers extended opportunities for studying the space distribution of the radiation-induced defects. In addition, we show a variation of the new transient iechnique using back-gate driving, which is applicable for studying the channel-substrate p-n junction, and the results are compared with those obtained from constant-capacitance voltage-transient measurements. Complementary measurements using front-gate and back-gate operation of the new technique can help to resolve the ambiguities usually associated with deep-level transient spectroscopy measurements of symmetrical p-n diodes.* Electrochemical Society Student Member.

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“…This connection is similar to that described in Ref. 5. A variable reference resistor is connected to the differential terminals.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%