Buried-shallow-implant (Bsi) process for High Efficiency Microwave power Mesfets

Abstract

We present a hybrid implant-epitaxy process that alleviates the inherent depth-width-dependent limitation of ion implantation. This technique allows shallow implants, which produce a thin active N layer with a controlled doping gradient, to be buried at an arbitrary depth below the less-critical, epitaxiallygrown surface layer. The formation and characteristics of GaAs buriedshallow-implant (BSI) layers for microwave power FETs will be discussed.