Calculations concerning the electron transit time for an ideal spherical vacuum microelectronics diode

Abstract

Sixteen years have elapsed since the 1st International Vacuum Microelectronics (VME) was held. Although much progress and many innovations have been made in this area, there still are a lot of work which need to he further consideration up to now. One problem is the application of vacuum microelectronics device (VME device) to the microwave devices, which are becoming more important in military electronic equipment develops. The quest to solve this problem is also one of the latest and most promising research in VME. Of course, for a VME microwave device, the estimation of the electron transit time f is rudimentary. As we know, this parameter decided on the performances and applications of the vacuum microelectronics device. Previous to this paper, the research after the electron transit time for the VME devices was generally in accordance with the device which was with an ideal planar electrode system. This work will make a complement with respect to previous works. First of all, we'll derive mathematically the formulae of the electron transit time for an idea spherical vacuum microelectronics (IS-VME) diode from its basic definition by using of the'Laplace equation's solution on the basis of a relative work '1.2.31, then we'll introduce an idea about an equivalent IS-VME diode, and let the later to be equivalent to a VME triode, finally, the electron transit time for a spherical vacuum microelectronics IS-VME triode is further estimated for instance.