Capacitance and conductance studies on silicon solar cells subjected to 8MeV electron irradiations

Bhat, P Sathyanarayana; Rao, Asha; Sanjeev, Ganesh; Usha, G.; Priya, G. Krishna; Meenakshi, Sankaran; Puthanveettil, Suresh E.

doi:10.1016/j.radphyschem.2015.02.010

Cited by 8 publications

(2 citation statements)

References 13 publications

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“…This is also one of the reasons that the defects in irradiated diode are less than in as grown diode. Irradiation is known [38,47,48] to induce displacement of the host atoms to form vacancies, interstitials, and antisite defects and annihilate others defects. Saqri et al [10] , Auret et al [49][50] and Goodman et al [51][52][53][54] found that gamma rays, electron and alpha irradiation enhance intrinsic defects like EL2 , which they assigned to arsenic antisite (As Ga ) or arsenic interstitial.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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(2016) Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. Current Applied Physics, 16 (8). pp. 850-858. ISSN 1878850-858. ISSN -1675 Access from the University of Nottingham repository: http://eprints.nottingham.ac.uk/39520/1/1-s2.0-S156717391630116X-main.pdf Copyright and reuse:The Nottingham ePrints service makes this work by researchers of the University of Nottingham available open access under the following conditions. This article is made available under the Creative Commons Attribution Non-commercial No Derivatives licence and may be reused according to the conditions of the licence. For more details see: http://creativecommons.org/licenses/by-nc-nd/2.5/ A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Effect aek1976@outlook.com Abstract:Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltagefrequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60 Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs 1-x N x Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

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Section: Accepted Manuscriptmentioning

confidence: 99%

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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“…Oprea et al [22] found that the PV panel capacitance and parallel resistance are affected by the PV panel degradation state when the potential-induced degradation was studied. Bhat et al [23] found that the silicon cell capacitance decreases when the solar cell is irradiated with 8 MeV electrons because the carrier concentration decreases when increasing dose. Kim et al [24] found that the capacitance of the PV panels increases when hot spots appear.…”

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confidence: 99%

Solar Cell Capacitance Determination Based on an RLC Resonant Circuit

Cotfas

Borza

et al. 2018

Energies

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The capacitance is one of the key dynamic parameters of solar cells, which can provide essential information regarding the quality and health state of the cell. However, the measurement of this parameter is not a trivial task, as it typically requires high accuracy instruments using, e.g., electrical impedance spectroscopy (IS). This paper introduces a simple and effective method to determine the electric capacitance of the solar cells. An RLC (Resistor Inductance Capacitor) circuit is formed by using an inductor as a load for the solar cell. The capacitance of the solar cell is found by measuring the frequency of the damped oscillation that occurs at the moment of connecting the inductor to the solar cell. The study is performed through simulation based on National Instruments (NI) Multisim application as SPICE simulation software and through experimental capacitance measurements of a monocrystalline silicon commercial solar cell and a photovoltaic panel using the proposed method. The results were validated using impedance spectroscopy. The differences between the capacitance values obtained by the two methods are of 1% for the solar cells and of 9.6% for the PV panel. The irradiance level effect upon the solar cell capacitance was studied obtaining an increase in the capacitance in function of the irradiance. By connecting different inductors to the solar cell, the frequency effect upon the solar cell capacitance was studied noticing a very small decrease in the capacitance with the frequency. Additionally, the temperature effect over the solar cell capacitance was studied achieving an increase in capacitance with temperature.Energies 2018, 11, 672 2 of 13 be determined by using the fitting method (like the series and parallel resistance and the capacitance in the case of solar cells). The IS method has the advantage of offering the information about three important dynamic parameters and can be implemented with dedicated instruments or LCR meters. The disadvantage of this method is the need for an external signal injection into the DUT which can increase the price of the used instruments, especially if the tests are conducted under light conditions. These conditions involve DC power electronics in the instruments in order to bias the PV.Other methods are based on the time response of the PV modules. These methods are based on the transient effect of the Resistor Capacitor (RC) circuit (discharging effect of the PV capacitance [19,20] or time constant of the PV circuit [21]). The reported time response-based methods require external signal injection into the DUT and are used only in dark conditions.The dynamic parameters can be used as tools to characterize and diagnose the quality and the degradation status of the PV modules. One of the key dynamic parameters is the electrical capacitance of the PV modules. Oprea et al. [22] found that the PV panel capacitance and parallel resistance are affected by the PV panel degradation state when the potential-induced degradation was studied. Bhat et al. [23] found that t...

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Comprehensive Spectroscopic Investigation of MoS₂‐Solar Cells with Exclusive Zn₃P₂ as HTL Having Least Lattice Mismatches for 32.55% PCE

Sharma,

Srivastava,

Jha

et al. 2024

Advcd Theory and Sims

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In this analytical study, four‐layer MoS2‐based renewable energy photovoltaic cell has been first introduced using SCAPS‐1d. Proposed cell has FTO as window layer, ZnSe as electron transport layer (ETL), MoS2 as absorber layer, and an exclusive Zn3P2 hole transport layer (HTL) with least lattice mismatch of about 1.8%. To explore highest performance through proposed novel solar cell configuration, simulation studies have been done on best possible optimized physical and electrical parameters. Simulated power conversion efficiency, short circuit current, open circuit voltage, and fill factor are 32.55%, 37.75 mA/cm2, 1038.4 mV, and 83.01% respectively. Further to investigate defect states between band levels, admittance, and impedance spectroscopic analysis has been done with an equivalent electrical circuit model obtained from EIS module. Present studies help to identify the carrier accumulation behavior at various least‐lattice mismatched interfaces and in bulk of four‐layer solar device. For this analysis, proposed renewable solar device is simulated for characteristics such as capacitance‐voltage (C‐V), capacitance‐frequency (C‐F), conductance‐voltage (G‐V), and conductance‐frequency (G‐F) under different suitable and practical physical conditions. In this technique, AC signal is applied to the solutions obtained from the semiconductor and continuity equations in SCAPS‐1d. Further, we have done an in‐depth analysis through these measurements.

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Capacitance and conductance studies on silicon solar cells subjected to 8MeV electron irradiations

Cited by 8 publications

References 13 publications

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Solar Cell Capacitance Determination Based on an RLC Resonant Circuit

Comprehensive Spectroscopic Investigation of MoS₂‐Solar Cells with Exclusive Zn₃P₂ as HTL Having Least Lattice Mismatches for 32.55% PCE

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Capacitance and conductance studies on silicon solar cells subjected to 8MeV electron irradiations

Cited by 8 publications

References 13 publications

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Solar Cell Capacitance Determination Based on an RLC Resonant Circuit

Comprehensive Spectroscopic Investigation of MoS2‐Solar Cells with Exclusive Zn3P2 as HTL Having Least Lattice Mismatches for 32.55% PCE

Contact Info

Product

Resources

About

Comprehensive Spectroscopic Investigation of MoS₂‐Solar Cells with Exclusive Zn₃P₂ as HTL Having Least Lattice Mismatches for 32.55% PCE