Capacitance measurements for diodes in the case of strong dependence of the diode-base series resistance on the applied voltage

Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions

“…For diodes with a high-resistance base the equivalent circuit includes a serially connected resistor R b in addition to the RC circuit (see, e.g., Refs. [24,28,29,39,40]). The capacitance of the base was taken into account, using an equivalent circuit made of two serially connected parallel RC circuits [24].…”

“…[24,28,29,39,40]). The capacitance of the base was taken into account, using an equivalent circuit made of two serially connected parallel RC circuits [24]. In our case the high-resistance part is located on the side of anode close to the metallurgical border of pn junction and has a finite length (see Fig.…”

“…It is known [24][25][26][27] that large values of the base region resistance (e.g., in diodes irradiated with electrons, neutrons) lead to ambiguous and sometimes even to erroneous results when the measured values of diode capacitance are directly used for plotting the capacitance-voltage characteristics and for the calculation of ionized impurity concentration profiles. It was shown in Refs.…”

Adaptive Filtering to Enhance Noise Immunity of Impedance and Admittance Spectroscopy: Comparison with Fourier Transformation

“…Electrical immittance (impedance and admittance) spectroscopy [1,2] (EIS) is a powerful tool for electronic device diagnostics [3][4][5], materials characterization [6][7][8][9][10][11], electrochemistry [12][13][14], alternative energy sources investigation [15][16][17][18], and experiments in biophysics [19][20][21][22][23][24]. The research of a dynamic systems have become a hot topic of impedance spectroscopy in recent years.…”