The sections in this article are
Introduction
Experimental Techniques
Interfaces between Lattice‐Matched, Isostructural Systems
Definition
Structure
Microscopic Structure
Mesoscopic and Macroscopic Structure
Interfaces Defined by Inhomogeneous Doping
Relaxation of Chemical Interfaces
Interdiffusion due to Thermal Annealing
Intermixing due to Ion‐Implantation
Summary
Interfaces between Lattice‐Mismatched, Isostructural Systems
Lattice Mismatch Strain and Relaxation Mechanisms
Origin and Magnitude of Lattice Mismatch Strain
Strain Accommodation and Relief Mechanisms
Epitaxial Layer Roughening
Interdiffusion
Misfit Dislocations
Competition between Different Relaxation Modes
The Critical Thickness for Misfit Dislocation Introduction: Excess Stress
Basic Concepts: Single Interface Systems
Extension to Multilayer Systems
Misfit Dislocation Kinetics
Kinetic Relaxation Models
Nucleation of Misfit Dislocations
Propagation of Misfit Dislocations
Interactions of Misfit Dislocations
Techniques for Reducing Interfacial and Threading Dislocation Densities
Electrical Properties of Misfit Dislocations
Summary
Interfaces between Crystalline Systems Differing in Composition and Structure
Introduction
Fabrication of Epitaxial Silicide–Silicon Interfaces
Monolayers Reaction
Interlayer Mediated Epitaxy
Growth of Silicon on Silicides
Conglomeration of Silicide Precipitates
Epitaxial Elemental Metals
Epitaxial Metallic Compounds on
III
–
V
Semiconductors
Structure, Energetics, and Electronic Properties of
M
–
S
Interfaces
Epitaxial Silicide–Silicon Interfaces
Epitaxial Elemental Metals
Intermetallic Compounds on
III
–
V
Semiconductors
Conclusions
Interfaces between Crystalline and Amorphous Materials: Dielectrics on Silicon
The
Si
/
Si
O
2
System
Processing
The
Si
/
Si
O
x
N
y
System
Alternative Gate Dielectrics
Conclusion