1996
DOI: 10.1016/s0040-6090(96)09065-7
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CdS thin film deposition by CW Nd:YAG laser

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Cited by 28 publications
(17 citation statements)
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“…[25] Notably, it has been suggested that the 2LO phonons are responsible for the stimulated laser emission at about 515.4 nm (as discussed later) originating from phonon-exciton coupling interactions at room temperature. [30] As compared to previous results obtained for CdS crystals, [31] the Raman peaks of the asprepared CdS nanowires are downshifted by about 5 cm -1 and also show asymmetric broadening. These features likely arise from the confinement of optical phonons in the nanometersized samples, as demonstrated by a spatial correlation model.…”
Section: Full Papersupporting
confidence: 50%
“…[25] Notably, it has been suggested that the 2LO phonons are responsible for the stimulated laser emission at about 515.4 nm (as discussed later) originating from phonon-exciton coupling interactions at room temperature. [30] As compared to previous results obtained for CdS crystals, [31] the Raman peaks of the asprepared CdS nanowires are downshifted by about 5 cm -1 and also show asymmetric broadening. These features likely arise from the confinement of optical phonons in the nanometersized samples, as demonstrated by a spatial correlation model.…”
Section: Full Papersupporting
confidence: 50%
“…S1(a): supporting information) only shows the d = 0.2069-nm peak of the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane of greenockite (h-CdS mineral; JCPDS 41-1049). The diagrams recorded on fragments of gently crushed platelets ( Fig.…”
Section: Phase Characterizationmentioning
confidence: 99%
“…S1(b): supporting information) confirm that the crystal mainly consists of h-CdS but discontinuous diffraction rings also reveal a dispersion of cubic moieties. The crystal is oriented with c-hexagonal axis in the platelet surface and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) axis perpendicular to that surface ( Fig. 1).…”
Section: Phase Characterizationmentioning
confidence: 99%
“…Extensive research has been done in the last decades due to its applications in electronic devices like field-effect transistors, solar cells, photoconductors, optical thin films filter, nonlinear integrated optical devices, light emitting diodes (LEDs) and laser heterostructures for emission in the visible spectral range (Trujillo et al 1996;Dai et al 1992;Hernandez-Contrerasa et al 2002;Ullrich et al 2000;Perna et al 2001;Alex 2004). For these purposes, CdS nanostructures have been deposited by different techniques of spray pyrolysis (SP), close space vapor transport (CSVT), vacuum evaporation (Ullrich 2001), chemical bath deposition (CBD), solution growth technique (SGT) (Wang et al 2000), sputtering, chemical vapor deposition (CVD), pulsed laser deposition (PLD) and spin coating technique.…”
Section: Introductionmentioning
confidence: 99%