2019 Devices for Integrated Circuit (DevIC) 2019
DOI: 10.1109/devic.2019.8783736
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Cell thickness optimization of dual junction InGaP/GaAs solar cell against temperature variation

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Cited by 2 publications
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“…The optimization at 300 K led to J SC of 15.19 mA/cm 2 , V OC of 2.53 V, FF of 91.32%, and an efficiency of 25.43% [26]. In 2019, Hungyo et al optimized the InGaP/GaAs DJ solar cell by varying the emitter and base thicknesses alongside temperature variation [27]. Furthermore, Oshima et al inspected experimentally the growth of InGaP on the GaAs substrate by Solid-Source Molecular Beam Epitaxy (SS-MBE).…”
Section: Introductionmentioning
confidence: 99%
“…The optimization at 300 K led to J SC of 15.19 mA/cm 2 , V OC of 2.53 V, FF of 91.32%, and an efficiency of 25.43% [26]. In 2019, Hungyo et al optimized the InGaP/GaAs DJ solar cell by varying the emitter and base thicknesses alongside temperature variation [27]. Furthermore, Oshima et al inspected experimentally the growth of InGaP on the GaAs substrate by Solid-Source Molecular Beam Epitaxy (SS-MBE).…”
Section: Introductionmentioning
confidence: 99%
“…Engineers have modeled solar cells' solar orbit and position overall times worldwide to determine optimal solar irradiation [2]. For achieving optimal cell temperature, the material parameters of the semiconductor, such as cell thickness and material type, have the most significant effect on performance [3]. Another critical factor that significantly impacts solar cell efficiency is the ratio between sunlight power input and its power output, which is one of the most important characteristics when implementing solar cell systems.…”
Section: Introductionmentioning
confidence: 99%