Recent
progress in the chemical vapor deposition technique toward growing
large-area and single-crystalline two-dimensional (2D) transition
metal dichalcogenides (TMDs) has resulted in an electronic/optoelectronic
device performance that rivals that of their top-down counterparts,
despite the extensive use of hydrogen, a common reducing agent that
readily generates defects in TMDs. Herein, we report that 2D MoSe2 domains containing oxide seeds are resistant to hydrogen-induced
defect generation. Specifically, we observed that the etching of the
edges of seed-containing MoSe2 was significantly less than
that of pristine MoSe2, without apparent seed particles,
under the same H2 annealing conditions. Our systematic
approach for controlling the H2 exposure time indicates
that the oxidation of Mo and the edge roughening of seedless MoSe2 coincidentally increase after H2 exposure owing
to the formation of Se vacancy followed by Mo oxidation, which is
not the case with seed-containing MoSe2. An ab
initio calculation indicates that hydrogen preferentially
adsorbs more onto O bonded to Mo than onto Se, providing further evidence
of the resistance of seeded MoSe2 to hydrogen etching.
This finding provides an insight into controlling defect formation
in 2D TMDs by employing sacrificial adsorption sites for reactive
species (i.e., hydrogen).