Chalcopyrite Based Solar Cells

Klenk, R.; Lux‐Steiner, Martha Ch.

doi:10.1002/0470091282.ch6

Cited by 14 publications

(7 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Cu(In,Ga)Se 2 (CIGS)-based solar cells, the most promising thin film technology, are receiving worldwide attention for solar power generation . Owing to their high absorption coefficient, only 1–2 μm thickness is sufficient to absorb more than 95% of the useful solar radiation (in the wavelength range of 300 to 1300 nm). , Unfortunately, the high performance of CIGS solar cells is hampered by parasitic absorption losses in the ZnO window and CdS buffer layers . ZnO strongly absorbs photons of λ < 390 nm, while CdS absorbs photons of λ < 500 nm.…”

mentioning

confidence: 99%

N-Functionalized Graphene Quantum Dots with Ultrahigh Quantum Yield and Large Stokes Shift: Efficient Downconverters for CIGS Solar Cells

Khan

Kim

2018

ACS Photonics

View full text Add to dashboard Cite

Copper indium gallium selenide (CIGS) is the most promising thin film solar cell technology. However, its high performance is hampered by its poor short-wavelength response. The short-wavelength response can be enhanced via photon downconversion using quantum dots. Unfortunately, most graphene quantum dots (GQDs) are not suitable as downconverters in CIGS cells owing to their low photoluminescence quantum yield (PL QY) and/ or low Stokes shift. Herein, an ultrahigh PL QY (99%) and a large Stokes shift (98 nm) are achieved for N-doped GQDs via a novel method. The performance of a CIGS solar cell is enhanced via photon downconversion and the lighttrapping effect using the NGQDs. The effectiveness of the NQGDs is manifested in a conversion efficiency (η) of 15.31%. In addition, improvements in the short-circuit current density from 30.69 mA/cm 2 to 31.77 mA/cm 2 and fill factor from 71.25% to 73.09% are observed. The n and J 0 values are decreased by insertion of NGQDs, indicating a reduction in the recombination losses.

show abstract

mentioning

confidence: 99%

N-Functionalized Graphene Quantum Dots with Ultrahigh Quantum Yield and Large Stokes Shift: Efficient Downconverters for CIGS Solar Cells

Khan

Kim

2018

ACS Photonics

View full text Add to dashboard Cite

show abstract

“…The most efficient CIGS solar cell fabricated so far used CdS buffer layer. Although CdS buffer layer has yielded high-efficiency cell, its toxicity [18], incompatibility with in-line vacuum-based production method [19] and low-performance level of CdS/CIGS cells in short wavelength domain [20]…”

Section: Buffer Layermentioning

confidence: 99%

“…Band alignment between absorber and buffer layer. Conduction band offset: (a) Cliff and (b) Spike[20].…”

mentioning

confidence: 99%

Copper-Indium-Gallium-diSelenide (CIGS) Nanocrystalline Bulk Semiconductor as the Absorber Layer and Its Current Technological Trend and Optimization

Khoshsirat¹,

Yunus²

2016

Nanoelectronics and Materials Development

View full text Add to dashboard Cite

The Copper Indium Gallium diSelenide CIGS thin λilm solar cells are considered in this chapter. The interest in Cu In -x , Ga x Se thin λilm solar cells has increased siμniλicantly due to its promisinμ characteristics λor hiμh perλormance and low cost. It is aimed to present an extensive evaluation on CIGS nanocrystalline bulk semiconductor and its application as an absorber layer λor thin λilm solar cells. It is also aimed to improve the CIGS thin λilm solar cell eλλiciency throuμh λindinμ optimum ranμes oλ material properties. The λirst section oλ this chapter μives an extensive overview on CIGS nanocrystalline bulk semiconductor backμround and technoloμical trend. In the middle section, a brieλ review on CIGS Solar Cell processinμ and challenμes are hiμhliμhted and the last section a numerical simulation results on the eλλects oλ each oλ constructive nano layer properties on cell perλormance are shown and compared with valid experimental results.

show abstract

“…However, it is well-known [1][2][3][4] that formation of MoSe 2 at the molybdenum-CIGS interface facilitates achievement of an ohmic anode contact.…”

Section: Cigs Interfacesmentioning

confidence: 99%

“…1 is reminiscent of two well-known thin-film solar cells, in which the absorber layer is either copper indium gallium diselenide (CIGS) [1][2][3][4] or cadmium telluride (CdTe) [5][6][7]. In modern realizations of these cells, the n-type window layer is not a simple, single layer, as implied by Fig.…”

Section: Introductionmentioning

confidence: 99%