2013
DOI: 10.1007/s00542-012-1721-8
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Challenges in fabrication and testing of piezoelectric MEMS with a particular focus on energy harvesters

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Cited by 13 publications
(12 citation statements)
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“…[3][4][5][6][7][8] Piezoelectric vibration energy harvesters based on PZT (lead zirconate titanate) or AlN (aluminum nitride) thin film have been studied widely, [9][10][11][12][13][14] a same cantilever could increase the operation bandwidth and output power of piezoelectric energy harvesters when these PZT elements were connected in parallel, and the amplitude of the cantilever was limited. 18 Dayou et al investigated the performance of width-split piezoelectric energy harvester and found that its bandwidth can be increased by wider variation in natural frequency of each participating split beam and connecting them in parallel.…”
Section: Introductionmentioning
confidence: 99%
“…[3][4][5][6][7][8] Piezoelectric vibration energy harvesters based on PZT (lead zirconate titanate) or AlN (aluminum nitride) thin film have been studied widely, [9][10][11][12][13][14] a same cantilever could increase the operation bandwidth and output power of piezoelectric energy harvesters when these PZT elements were connected in parallel, and the amplitude of the cantilever was limited. 18 Dayou et al investigated the performance of width-split piezoelectric energy harvester and found that its bandwidth can be increased by wider variation in natural frequency of each participating split beam and connecting them in parallel.…”
Section: Introductionmentioning
confidence: 99%
“…This both increases the volume of piezoelectric, and allows the output voltage of a given film in a bimorph structure to be approximately doubled relative to that of a unimorph without increasing the total area of the device. However, challenges are encountered in the growth of a phase‐pure PZT film at elevated temperatures due to the volatility and propensity for resputtering of PbO . Consequently, the amount of excess Pb in the PZT target, the oxygen and Ar pressure, and the substrate temperature were optimized, as described elsewhere …”
Section: Resultsmentioning
confidence: 87%
“…Although there are previous reports on highly (001) oriented, dense PZT films, most of these describe films with 0.5–4 µm thickness on Si, where the figure of merit for energy harvesting is low. In this work, a high‐temperature sputtering approach was adopted to grow thick PZT films on both sides of Ni foils.…”
Section: Introductionmentioning
confidence: 99%
“…Several difficulties encountered with this chosen method of releasing the energy harvester structure will be discussed at length in the following sections. Throughout the remaining microfabrication process flow, several obstacles were encountered, including difficulties caused by titanium residues from lower electrode etching, uneven and non-continuous films deposited by a simultaneous sol-gel and lift-off process, and wafer handling issues caused through the backside etching required to release the harvesters from the silicon wafer [ 9 , 19 ].…”
Section: Introductionmentioning
confidence: 99%
“…Additionally, the harvester operates under a base vibration, wafer-level testing was not possible. Therefore, full packaging of the harvesters were required, leading to several challenges dealing with adhesion of wirebonds and the overall design and implementation of suitable packaging [ 9 , 19 ]. Finally, significant challenges were encountered in designing and fabricating suitable conditioning circuitry including maximizing the efficiency and charging current delivered to the storage medium.…”
Section: Introductionmentioning
confidence: 99%