Chapter 4 Diluted magnetic semiconductors

Kossut, J.; Dobrowolski, Witold

doi:10.1016/s1567-2719(05)80045-9

Cited by 73 publications

(49 citation statements)

References 255 publications

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“…Two kinds of crystals have been selected for the optical investigations: HgSe doped with Fe and HgSe doped with Co. As it is well known Fe in HgSe is a resonant donor [6] and the compensation ratio D should be close to 1 for this material. To the contrary, Co impurity in HgSe acts as an acceptor (at least for the high doping concentration range) [7,8] and a nonvanishing compensation can be easily obtained in this case.…”

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confidence: 99%

Plasma Edge Modification in Strongly Compensated Semiconductors

et al. 1995

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We demonstrate that the electron-impurity interaction can modify the reflectivity in the vicinity of plasma minimum giving rise to a small dip oii the plasma edge. Experimental spectra taken for Ηgι-x C ox S e for x < 0.02 at various temperatures confirm this theoretical prediction. The position of the structure can be used to determine the plasma frequency in highly compensated materials at low temperatures.PACS numbers: 71.45. Gm, 78.30.Fs, 72.30.+q The infrared absorption coefficient is most often described in terms of the simple Dude-Zener theory assuming frequency independent damping constants of free-carrier plasma and phonon excitations. Such approximation can be used to interpret the experimental data taken for lightly doped or uncompensated materials. However, in heavily doped and/or highly compensated semiconduction some deviations from such "classical" picture can be expected due to the increasing role of the collective plasma (plasmon) excitations in the process of the free-carrier absorption. Plasmon generation in the process of photon absorption by free-electron gas in semiconduction is possible only if ionized impurities or other imperfections breaking the translational invariance are present in the system. Resonant behaviour of the free-carrier loss function above the plasma frequency leads to the enhancement of the damping parameter in the ac conductivity.A lot of studies have been devoted to the role of collective excitations in the free-carrier absorption. They were primarily related to the question of plasmon excitation in the process of electron-impurity scattering (for the references see,

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Plasma Edge Modification in Strongly Compensated Semiconductors

et al. 1995

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“…As it was shown by means of many experiments and calculations [1][2][3][4][5] the unusual properties of DMS are defined by the interaction of the open shell transition metal (TM) ions with host semiconductor environment. In particular, exchange interaction between localised TM 3d spins and the band electrons as well as the sp-d hybridization had to be taken into account if any proper description of electronic band stucture of DMS was to be constucted [1][2][3][4][5].…”

Section: Bj Kowalski Et Almentioning

confidence: 99%

“…In particular, exchange interaction between localised TM 3d spins and the band electrons as well as the sp-d hybridization had to be taken into account if any proper description of electronic band stucture of DMS was to be constucted [1][2][3][4][5].…”

Section: Bj Kowalski Et Almentioning

confidence: 99%

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Fe 3d Contribution to the Valence Band of Cubic Hg_1-xFe_xS - Resonant Photoemission Study

et al. 1995

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Resonant photoemission spectra of cubic Ηg0.94Fe0.06S were measured for photoii energies near to the energy of intra atomic Fe 3p6 3d6 -^ 3p 5 3d 7 transition. The difference between the spectra taken at resonance and antiresonance is presented as a measure of the energy distribution of Fe 3d derived states. The results obtained show that Fe 3d states contribute to the whole valence band with a distinct structure appearing at the band edge.PACS numbers: 79.60.-i Many of the diluted magnetic semiconduction (DMS) based on II-VI compounds have been extensively investigated since the 70s. Their electric, magnetic and optical properties were determined and band stuctures described [1][2][3][4][5]. However, this is still not the case for those solid solutions which would contain mercury sulphide as a non magnetic component. This compound is an exception among the other, tetrahedrally bonded, members of the II-VI family. Its natural form (α-HgS) is a wide gap semiconductor of a cinnabar crystal lattice. The cubic modification of mercury sulphide, β-ΗgS, is stable at above 550 Κ but it transforms upon cooling into α-ΗgS [6]. Thus, big size, bulk monocrystals of cubic HgS have not been available to experimentation until quite recently. Some information about crystal stucture and electronic properties was obtained from experiments performed for a powder produced by chemical precipitation [7], a natural polycrystalline material highly doped with Fe (metacinnabar) [8], or vacuum-evaporated thin films [7].However, a technique of stabilization of the cubic lattice in big monocrystals of HgS grown by means of an equilibrium method has been recently proposed [9]. It is based on doping the crystals with a transition metal (e.g. Fe, Co) or selenium. That achievement made it possible to investigate further properties of β-ΗgS with prospects to compare the results with those known for HgTe and HgSe as well as for the cinnabar form of HgS. Moreover, a new group of solid solutions (DMS, among others) has been obtained. The opportunity arose to fjll the gap in the set of data concerning properties of II-VI based diluted magnetic semiconductors.(791)

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“…There is also a possibility to grow zinc-blende Cd1-xMnxTe epitaxial films in the whole range of x using the nonequilibrium molecular beam epitaxy (MBE) method. Introduction of DMS materials into low-dimensional stuctures made possible studying of many interesting phenomena [2], related e.g. to a variation of energies of the band edges in an external magnetic field.…”

Section: Introductionmentioning

confidence: 99%

Determination of Exciton Zeeman Splittings in Cd_1-xMn_xTe from Faraday Rotation Measurements

Stachow

Gaj

1995

Acta Phys. Pol. A

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Reflectivity and Faraday rotation measurements were carried out on Cd1-x Mn x Te bulk crystals in the complete zinc -blende range of composition 0 < z < 0.71. From a comparison of the results of these two experiments for samples with x < 0.3, we demonstrate that the Faraday angle θ, measured in limited spectral range, is proportional to the energy splitting of exciton states ΔΕ, measured at the same temperature (2 K) and magnetic field B (up to 5 T). The determined proportionality constant was used to calculate ΔE values also for x > 0.3. This allowed us to find an empirical description of ΔE values for the whole range of compositions as a function of B and x.

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Chapter 4 Diluted magnetic semiconductors

Cited by 73 publications

References 255 publications

Plasma Edge Modification in Strongly Compensated Semiconductors

Plasma Edge Modification in Strongly Compensated Semiconductors

Fe 3d Contribution to the Valence Band of Cubic Hg_1-xFe_xS - Resonant Photoemission Study

Determination of Exciton Zeeman Splittings in Cd_1-xMn_xTe from Faraday Rotation Measurements

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Chapter 4 Diluted magnetic semiconductors

Cited by 73 publications

References 255 publications

Plasma Edge Modification in Strongly Compensated Semiconductors

Plasma Edge Modification in Strongly Compensated Semiconductors

Fe 3d Contribution to the Valence Band of Cubic Hg1-xFexS - Resonant Photoemission Study

Determination of Exciton Zeeman Splittings in Cd1-xMnxTe from Faraday Rotation Measurements

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Fe 3d Contribution to the Valence Band of Cubic Hg_1-xFe_xS - Resonant Photoemission Study

Determination of Exciton Zeeman Splittings in Cd_1-xMn_xTe from Faraday Rotation Measurements