Characteristics of deep ultraviolet AlGaN-based light emitting diodes with p-hBN layer

Dong, Ke; Chen, D.J.; Shi, Jianping; Liu, Bin; Lu, Hai; Zhang, R.; Zheng, Yi

doi:10.1016/j.physe.2015.08.035

Cited by 17 publications

(6 citation statements)

References 19 publications

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“…The layer structure of the simulated DUV LEDs is similar to that of the reported DUV LEDs. 19 For DUV LED-III, the sapphire substrate was removed and the thickness of n-AlGaN layer was reduced to be 3 μm, while the other layers are similar to flip-chip structure. For simplicity, the effects of the electrodes, area of active layer and current spreading on LEE were not considered.…”

Section: Methodsmentioning

confidence: 99%

“…16,17 However, the external quantum efficiency (EQE) of AlGaN-based DUV LED is still low. For device with the wavelength around 270-280 nm, the maximum EQE of DUV LEDs is reported to be about 20%, 18,19 which is much lower than that of InGaN visible LEDs. [20][21][22][23] Consequently, improving the light extraction efficiency (LEE) is considered to be critical to achieve high-performance AlGaN-based DUV LEDs.…”

mentioning

confidence: 92%

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Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Wan

Zhou

Lan

et al. 2020

ECS J. Solid State Sci. Technol.

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Using finite-difference time-domain method, the light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) is investigated. Simulation results show that compared to flat sapphire substrate, the nano-patterned sapphire substrate (NPSS) expands the extraction angles of top surface and sidewalls. As a result, the LEE of transverse-magnetic (TM) polarized light is improved significantly. Roughening on the backside of n-AlGaN surface significantly enhances the LEE of top surface of thin-film flip-chip DUV LEDs. However, the LEE of sidewalls of thin-film flip-chip DUV LEDs is greatly weakened. For bare DUV LED, the LEE of flip-chip LED on NPSS is estimated to be about 15%, which is around 50% higher than that of thin-film flip-chip DUV LED with roughening on the backside of n-AlGaN surface.

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 92%

Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Wan

Zhou

Lan

et al. 2020

ECS J. Solid State Sci. Technol.

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show abstract

“…The numerical simulation is executed with the Advance Physical Model of Semiconductor Devices (APSYS) program . In the simulation, the band structure and wave functions are calculated utilizing a self‐consistent 6‐band K · p method combined with solving Poisson's equation, current continuity equation, and carrier transport equation . The band‐offset ratio △ E c /△ E g of 0.7 is adopted for AlGaN MQWs .…”

Section: Structure and Parametersmentioning

confidence: 99%

Improving Performance of Algan‐Based Deep‐Ultraviolet Light‐Emitting Diodes by Inserting a Higher Al‐Content Algan Layer Within the Multiple Quantum Wells

Lü

Wan

et al. 2017

Physica Status Solidi (a)

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Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with light-emitting wavelength around 265 nm are investigated by inserting a higher Al-content AlGaN layer within the multiple quantum wells (MQWs). It is found that there is a significant enhancement of light output power (LOP) and efficiency droop for DUV-LEDs with the inserted higher Alcontent AlGaN layer compared to those with the conventional one. The location of the AlGaN layer with higher Al-content in the MQWs is proven to greatly affect the distribution of carriers and the overlap of electron and hole wave functions. The optimal structure can be achieved when the higher Al-content layer is placed on the right side within the MQWs. The key factors for the performance improvements for this specific design is the enhanced hole transport and reduced electron leakage.

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“…Scientists have utilized a wide range of approaches to investigate the mentioned problems: increase hole injection while lowering electron overflow, we can use a different EBL [33,34]. Researchers are also introducing new compounds like (h-BN) for effective UV optoelectronic devices [18,35,36]. Instead of a constant composition, a graded AlGaN heterojunction is utilized to provide reduced turn-on voltage and greater photo confinement [37,38].…”

mentioning

confidence: 99%

Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques

Rehman,

Rahman,

Haq

et al. 2024

Phys. Scr.

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As part of this study, we present a study on the act of electrically driven Laser Diode (LD) using trinary Aluminum Gallium Nitride (AlGaN) with optimized doping concentrations. To increase the LD’s output power and capabilities, we focused on utilizing different doping concentrations in the electron-blocking layer (EBL). We conducted the calculations with PICS 3D software; we obtained simulation results indicating that the designed LD structure successfully emitted an ultraviolet (UV) laser class-c at a wavelength of 263.7 nm. By implementing this approach, we anticipate achieving higher optical output power by 6%, enhancing the concentration of electron and hole, and reducing the electron current density (356.1 to 342.8) and threshold voltage (4.516 to 4.5 V), and hole current density increases in AlGaN-based ultraviolet LDs. These promising outcomes can be attributed to the effective conduction band barrier height achieved by the optimized electron-blocking layer (EBL).

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Characteristics of deep ultraviolet AlGaN-based light emitting diodes with p-hBN layer

Cited by 17 publications

References 19 publications

Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Improving Performance of Algan‐Based Deep‐Ultraviolet Light‐Emitting Diodes by Inserting a Higher Al‐Content Algan Layer Within the Multiple Quantum Wells

Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques

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