Characteristics of Strain-Induced InxGa1–xAs Nanowires Grown on Si(111) Substrates

Shin, Jae Cheol; Choi, Kyoung Jin; Kim, Do Yang; Choi, Won Jun; Li, Xiuling

doi:10.1021/cg300210h

Cited by 27 publications

(39 citation statements)

References 23 publications

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“…The large lattice mismatch strain (i.e., 11%) between Si and InAs allows isolated InAs islands to be formed on the Si substrate. In this case, continuous growth enables the islands to extend preferentially in the <111> direction because the surface energy is lowest in that direction [22]. Note that the self-assembled growth of the InAs NWs on Si differs from the self-catalyzed growth (i.e., In droplet) of InAs NWs [23][24][25].…”

Section: Methodsmentioning

confidence: 99%

“…Note that the self-assembled growth of the InAs NWs on Si differs from the self-catalyzed growth (i.e., In droplet) of InAs NWs [23][24][25]. For example, the self-assembled growth of the InAs NWs proceeds via the VPE mode only; thus, the diameter of the selfassembled InAs NWs can be very uniform along their growth direction [22]. In contrast to the self-assembled growth, the self-catalyzed InAs NW exhibits a tapering shape and has a droplet on its top because the VLS and the VPE growth mechanisms coexist [25].…”

Section: Methodsmentioning

confidence: 99%

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Investigation of p-type InAs nanowires grown via Au-assisted and self-assembled methods

Hwang

Shin

2014

Journal of the Korean Physical Society

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We have investigated the p-type doping profiling of InAs nanowries (NWs) grown via the Auassisted vapor-liquid-sold (VLS) and the self-assembled growth methods. The VLS is the most commonly used mechanism for the growth of semiconductor NWs. The VLS-grown InAs NWs, however, show a large degree of variation in their electrical resistance along their growth direction. In addition, attempts to form heavily p-type doped InAs NWs lead to a strong kinking in the shapes of the NWs, disturbing their one-dimensional growth. In contrast, the p-type doped InAs NWs grown via the self-assembled method exhibit very low and uniform electrical resistance along the growth direction of the NWs. The doping mechanisms of the InAs NWs and their growth methods are further discussed.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Investigation of p-type InAs nanowires grown via Au-assisted and self-assembled methods

Hwang

Shin

2014

Journal of the Korean Physical Society

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“…The indium composition could be varying from 0.2−1, and the NW diameter is inversely proportional to the lattice mismatch. Interestingly, the bending of these NWs is often observed, and more detail analysis on these NWs shows a few MLs of compositional fluctuation induced nonuniform strain across the NWs [162]. However, apart from the uniform morphology and composition within single NW measurement, the photoluminescence, and high-resolution XRD spectra always gave a broad linewidth over the whole ensemble NWs.…”

Section: Science China Materialsmentioning

confidence: 99%

Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

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introduced by Wagner and Ellis in the 1960's to grow Si submicrosize whiskers [2]. Although Si nanowires are useful, particular their easy incorporation with mature Si technology, which makes products cheap and suitable for mass production, the indirect band gap of Si is hindering the application of this material in many fields where direct band gap is essential, such as optoelectronics. In this regard, III-V compound semiconductors are dominating due to their direct band gap and flexibility in band gap and lattice engineering. In the early 1990s, Scientists from Hitachi employed the VLS approach to grow III-V nanowires [3,4]. At that time, good position and orientation control was achieved as well as the demonstration of the first p-n junctions based on heterostructured nanowires [5]. These novel one-dimensional (1D) III-V nanostructures provide a good model system for investigating the dependence of electronic transport, optical, and mechanical properties on their confinement effects. They demonstrated the potential of these nanowires in the next-generation integrated circuits and functional devices, such as field-effect transistors [6−8], single-electron transistors [9], light-emitting devices [10], chemical sensors [11−14], and THz detectors [15].The control of NW growth is considered to be one of the key points and the foundation of successful NW-based device fabrication. The benefit of NWs is that due to their small radial dimension and the large aspect ratio, the strain in axial heterostructures induced by the lattice mismatch can be relaxed within a small region close to the interface. Therefore, there is virtually no limitation in the choice of materials by the requirement of lattice-matching.Another benefit of III-V semiconductor NWs is that by carefully choosing substrates, the growth of NWs can be self-assembled, and as-grown epitaxial NWs are free-standing. Additionally, by employing nanoscale lithography techniques, e.g., electron beam lithography, it is possible to realize the growth of NWs on pre-patterned substrates [16−20].ABSTRACT In this paper, we present a review about recent progress on the growth of III-V semiconductor homo-and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/ V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

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“…[96][97][98][99][100] In a typical self-catalysed growth, one of the reactants (normally the one with low melting point) agglomerates first to form nuclei (droplet), which then absorbs vapour reactants to grow unidirectional nanostructure by VS/VLS mechanism. Such self-catalysed mechanism has been widely observed and adopted in III-V NW growth.…”

Section: Catalyst-free Growth Mechanismsmentioning

confidence: 99%

“…98 The second is that the nucleation is so fast that no droplet was actually formed during the growth, and the growth is completely governed by VS mechanism (Figure 2.31d), where the unidirectional growth direction is attributed to the competition in growth rate among different crystallographic planes. [99][100] Nevertheless, for both models, the nanostructure growth needs assistance of heterogeneous nucleation, such as dislocation, 99 strain, 99 impurity(e.g. silicon oxides) 100 and selective area pattern.…”

Section: Catalyst-free Growth Mechanismsmentioning

confidence: 99%

Growth of metal chalcogenide nanomaterials and their characterizations

Zou¹

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Metal chalcogenides, such as IV-VI and V-VI compounds (SnTe, Bi 2 Te 3 , Bi 2 Se 3 ), are ideal candidates for applications in thermoelectricity and topological (crystalline) insulators. This PhD thesis focuses on the controllable synthesis of metal chalcogenide nanostructures via chemical vapour deposition method (CVD), and on the understanding of the crystal structure, growth mechanism, and structure-property correlation in the as-grown nanomaterials. IV-VI and V-VI compounds have attracted extensive research interest because of their excellent thermoelectric properties and exotic physical properties. Nevertheless, there still exist unresolved issues that prevent the further applications of IV-VI and V-VI nanomaterials by rational design, including (1) it is still difficult to grow these nanomaterials with controllable morphology and (2) crystal structure; (3) limited investigations of their growth mechanisms; (4) limited study on structure-property relationships in the nanostructures. Therefore, in this thesis, the controllable growth technique, growth mechanism and structure-property relation in IV-VI and V-VI based nanostructures are explored. The objective is achieved in the following steps: Carried out data analysis (10%)Wrote the paper (15%)

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Characteristics of Strain-Induced In_xGa_1–xAs Nanowires Grown on Si(111) Substrates

Cited by 27 publications

References 23 publications

Investigation of p-type InAs nanowires grown via Au-assisted and self-assembled methods

Investigation of p-type InAs nanowires grown via Au-assisted and self-assembled methods

Growth of III-V semiconductor nanowires and their heterostructures

Growth of metal chalcogenide nanomaterials and their characterizations

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