Characterization of CdMnTe Planar Nuclear Detectors Grown by Vertical Bridgman Technique

Egarievwe, Stephen U.; Roy, Utpal; Agbalagba, Ezekiel O.; Dunning, Keiandrea L.; Okobiah, Oghaghare K.; Israel, Mordecai B.; Drabo, Mebougna L.; James, R. B.

doi:10.1109/nss/mic42101.2019.9059615

Cited by 2 publications

(2 citation statements)

References 19 publications

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“…Another example is a planar Cd 0.95 Mn 0.05 Te detector biased at 150 V, which has an energy resolution of 9.2% FWHM for the 59.5 keV gamma peak of Am-241. This sample had an electron μτ product of 1.7 × 10 −3 cm 2 V −1 [ 19 ]. Finally, a Frisch grid Cd 0.95 Mn 0.05 Te detector biased at 2900 V achieves an energy resolution of 7.5% FWHM at 662 keV of Cs-137.…”

Section: Resultsmentioning

confidence: 99%

“…CdTe-based compounds such as (Cd,Zn)Te [ 1 , 2 , 3 , 4 ], (Cd,Zn)(Te,Se) [ 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ], (Cd,Mn)Te [ 19 , 20 , 21 , 22 , 23 , 24 ], (Cd,Mn)(Te,Se) [ 25 , 26 ], (Cd,Mg)Te [ 27 , 28 , 29 , 30 , 31 , 32 ], and Cd(Te,Se) [ 33 , 34 , 35 , 36 , 37 , 38 , 39 ] are currently being tested as materials for room-temperature X- and gamma-ray detectors. In these nuclear detectors, it is crucial to maximize the flow of radiation-induced charge carriers through the detector volume to the respective electrodes.…”

Section: Introductionmentioning

confidence: 99%

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Bridgman-Grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A Comparison of Suitability for X and Gamma Detectors

Masłowska,

Kochanowska,

Sulich

et al. 2024

Sensors

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This study explores the suitability of (Cd,Mn)Te and (Cd,Mn)(Te,Se) as room-temperature X-ray and gamma-ray detector materials, grown using the Bridgman method. The investigation compares their crystal structure, mechanical and optical properties, and radiation detection capabilities. Both crystals can yield large-area single crystal samples measuring approximately 30 × 30 mm2. In low-temperature photoluminescence analysis, both materials showed defect states, and annealing in cadmium vapors effectively eliminated donor–acceptor pair luminescence in (Cd,Mn)Te but not in (Cd,Mn)(Te,Se). Moreover, harder (Cd,Mn)(Te,Se) exhibited a higher etch pit density compared to softer (Cd,Mn)Te. X-ray diffraction examination revealed uniform lattice constant distribution in both compounds, with variations at a part per million level. (Cd,Mn)Te crystals demonstrated excellent single crystal properties with narrower omega scan widths, while (Cd,Mn)(Te,Se) exhibited a high contribution of block-like structures with significantly larger misorientation angles. Spectroscopic evaluations revealed better performance of a pixelated (Cd,Mn)Te detector, in comparison to (Cd,Mn)(Te,Se), achieving a mean full width at half maximum of 14% for the 122 keV gamma peak of Co-57. The reduced performance of the (Cd,Mn)(Te,Se) detector may be attributed to deep trap-related luminescence or block-like structures with larger misorientation angles. In conclusion, Bridgman-grown (Cd,Mn)Te emerges as a more promising material for X-ray and gamma-ray detectors when compared to (Cd,Mn)(Te,Se).

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Bridgman-Grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A Comparison of Suitability for X and Gamma Detectors

Masłowska,

Kochanowska,

Sulich

et al. 2024

Sensors

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Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol

Agbalagba¹,

Drabo²,

Egarievwe³

et al. 2021

MSA

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Semiconductor nuclear radiation detectors made from tertiary and quaternary compounds of cadmium telluride (CdTe) can operate at room temperature without cryogenic cooling. One of such materials that have become of great interest is cadmium zinc telluride selenide (CdZnTeSe). Compared to other CdTe-based materials, such as cadmium zinc telluride (CdZnTe), CdZnTeSe can be grown with much less Te inclusions and sub-grain boundary networks. Chemical etching is often used to smoothen wafer surfaces during detector fabrication. This paper presents the characterization of CdZnTeSe that is chemically etched using bromine methanol solution. Infrared imaging shows that the wafer has no sub-grain boundary networks that often limit detector performance. The current-voltage (I-V) characterization experiment gave a resistivity of 4.6 × 10 10 Ω-cm for the sample. The I-V curve was linear in the ±10 to ±50 volts range. An energy resolution of 7.2% was recorded at 100 V for the 59.6-keV gamma line of 241 Am.

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Characterization of CdMnTe Planar Nuclear Detectors Grown by Vertical Bridgman Technique

Cited by 2 publications

References 19 publications

Bridgman-Grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A Comparison of Suitability for X and Gamma Detectors

Bridgman-Grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A Comparison of Suitability for X and Gamma Detectors

Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol

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