Characterization of cupric oxide thin films prepared by nebulizer spray technique

Özmenteş, Reşit

doi:10.1016/j.matpr.2021.01.558

Cited by 4 publications

(3 citation statements)

References 10 publications

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“…Figure 6. The surface morphology of the as-grown Cu2O layer by electrodeposition method Reproduced from [21] with permission, copyright@2016, Elsevier…”

Section: Discussion Of Related Resultsmentioning

confidence: 99%

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Cuprous Oxide (Cu2O) Based Solar Cell Thickness Dependence

Kunya,

Abdu,

Mustafa

et al. 2022

bjps

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The rapid advancement of devices that transform light into other energy forms has led to the growth of various solar cell structures established on silicon and other compound semiconductors. Photovoltaic devices that are efficient are required to ensure solar power's competitiveness with traditional energy sources. The most intriguing phase of copper oxides is Cu2O. There have been several findings of Cu2O-based solar cells; nevertheless, their efficiencies are quite minimal due to charge recombination at the crystal boundary and other factors. The goal of the present study is to review the effect of Cu2O thin film thickness prepared by oxidation techniques on efficiency, and then previous related work was systematically studied to investigate their structural and morphological properties. Gravimetric measurements were used to determine the thickness of Cu2O on Cu. The XRD pattern presented shows a single phase of Cu2O with no obvious impurity peaks. The finding shows that when the thickness is 26.30µm, the conversion efficiency is high; image analysis from a different method of deposition demonstrated that the films were compact throughout the entire sample surface, with no observed pinholes. The morphology of the stratum was strongly dependent on the deposition techniques.

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“…Figure 6. The surface morphology of the as-grown Cu2O layer by electrodeposition method Reproduced from [21] with permission, copyright@2016, Elsevier…”

Section: Discussion Of Related Resultsmentioning

confidence: 99%

“…Copper oxide has dual basic semiconductor phases' cuprous oxide (Cu2O) and cupric oxide (CuO) of cubic and monoclinic structures, respectively (Ozmentes & Temirci, 2017). Cu2O unit cell comprises copper and oxygen ions and pertains to the space group Pn3m (Kara et al, 2018).…”

Section: Introductionmentioning

confidence: 99%

Cuprous Oxide (Cu2O) Based Solar Cell Thickness Dependence

Kunya,

Abdu,

Mustafa

et al. 2022

bjps

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“…In recent years, researchers are focusing their attention on metal oxide semiconductors for numerous material science applications, including optoelectronic, photovoltaic, and magnetic systems [1]. Copper oxide thin films have sparked a great deal of interest among transition metal oxides due to their p-type semiconducting [2].…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic and Dielectric Properties of Tenorite CuO Thin Films Sprayed at Various Molar Concentrations

Ben Messaoud,

Ouahab,

Rahmane

et al. 2024

Period. Polytech. Chem. Eng.

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The work in hand presents the elaboration of CuO thin films using a home-made spray pyrolysis technique at room atmosphere. The films were synthesized on preheated glass substrate at 450 °C. The source solution molarity was varied from 0.025 to 0.1 mol/L. The films were characterized by employing X-Ray Diffraction technique, UV-Vis-NIR spectrophotometry, Scanning Electron Microscope imagery, Energy Dispersive Spectroscopy, and four-points probe techniques. The X-ray diffraction analysis confirmed that all films are polycrystalline with a preferred orientation along the plane (−111) of the monoclinic crystal structure phase of tenorite (CuO). The SEM images showed a homogeneous and smooth surface. Crystallinity and grain size were improved. The rise of solution concentration induced a reduction of transmittance and reflectance in the visible region. The energy gap, the absorption coefficient, the extinction coefficient, refractive index, dielectric constant (ԑr and ԑi) and loss energy were estimated from transmittance and reflectance data. The gap energy decreases from 2.72 to 2.56 eV. The film deposited for 0.025 mol/L exhibits the highest real part of the dielectric constant (ԑr ~ 17). The film resistivity which is in order of 102 Ω cm decreases with the increase of molar concentration. The estimated dielectric constant indicated that the resulting CuO thin films could be used as dielectric layers for optoelectronic devices working in Vis-NIR region of radiation. Furthermore, the relatively high band gap, high absorption coefficient and high conductivity of the film obtained at 0.075 mol/L, make them good candidates as absorption layers in solar cells applications.

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Characterizations and optical discussions of thermally evaporated titanium dioxide thin films

Özmenteş,

Hassanien

2024

J Opt

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Characterization of cupric oxide thin films prepared by nebulizer spray technique

Cited by 4 publications

References 10 publications

Cuprous Oxide (Cu2O) Based Solar Cell Thickness Dependence

Cuprous Oxide (Cu2O) Based Solar Cell Thickness Dependence

Optoelectronic and Dielectric Properties of Tenorite CuO Thin Films Sprayed at Various Molar Concentrations

Characterizations and optical discussions of thermally evaporated titanium dioxide thin films

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