Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition

Lachab, M.; Youn, Doo–Hyeb; Fareed, R. S. Qhalid; Wang, T; Sakai, Shiro

doi:10.1016/s0038-1101(00)00072-1

Cited by 42 publications

(27 citation statements)

References 26 publications

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“…Also hydrogen passivation and activation of the Mg -H complex seem not to be only the cause limiting p-GaN conductivity. Generally, hole and acceptor concentrations decrease with increasing [Mg] in heavily Mg-doped GaN [1,2]. At this time, dominant PL emission begins to change from shallow Mg acceptor levels around 3.1−3.2 eV (hereafter, UV band) to deep levels around 2.8 −2.9 eV (hereafter, blue band) and/or sometimes, more deeper levels [1 -4].…”

mentioning

confidence: 99%

Effects of Mg fluctuation on the electrical and optical properties in p‐GaN/undoped GaN layers dependent on the growth temperature

Kim

Cho

Hong

et al. 2003

phys. stat. sol. (c)

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The effects of heavly Mg doping dependent on the growth temperature of p-GaN layers grown on undoped GaN layers by metalorganic chemical vapor deposition (MOCVD) on electrical and optical properties were studied by capacitance -voltage (C -V) and temperature-dependent photoluminescence (TDPL), respectively. At high growth temperature of p-GaN above 1110 °C, optical microscopy images as well as atomic force microscopy (AFM) images show polygonal hillocks on heavily Mg-doped GaN surface. It was also found that fluctuation of Mg concentration ([Mg]) measured by secondary ion mass spectroscopy (SIMS) was increased with increasing growth temperature. These phenomena were appeared to decrease N A -N D and change PL emission from 3.1−3.2 eV of conduction band-to-shallow Mg acceptor (e, A) transition to 2.8−2.9 eV of Mg-related deep donor-to-acceptor pair (DAP) transition.

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mentioning

confidence: 99%

Effects of Mg fluctuation on the electrical and optical properties in p‐GaN/undoped GaN layers dependent on the growth temperature

Kim

Cho

Hong

et al. 2003

phys. stat. sol. (c)

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“…72 However, the hole population is limited to within 10 18 cm À3 in p-type GaN:Mg, and the resistivity is always greater than 10 4 X cm (Ref. 73) due to (a) the large thermal activation energy of Mg in GaN (120-250 meV) resulting in low activation efficiencies of 1%-2%; 74 (b) the consumption of Mg by hydrogen passivation, i.e., the formation of the electrically inactive neutral complex (Mg-H) 0 during the growth or high-temperature annealing process; 75 (c) the hole compensation by oxygen impurities causing a high-resistivity, semi-insulating (SI) material; 76 and (d) the consumption of Mg by self-compensation, i.e., the formation of a deep donor with a nitrogen vacancy, Mg Ga V N . 77,78 Besides n-and p-type doping, semi-insulating GaN has also been successfully produced.…”

Section: B Gan Growthmentioning

confidence: 99%

Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by 14N(n,p)14C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

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“…The effects of Cp 2 Mg/Ga ratio or doping concentration on the p-GaN grown by metalorganic chemical vapor deposition (MOCVD) have been investigated in the literature. [11][12][13][14] However, very few reports have focused on the relationship of its electrical properties with optical properties and surface morphology. It is, therefore, necessary to investigate further the effects of Cp 2 Mg/Ga ratio on the properties of p-GaN and the relationship between electrical and optical properties.…”

Section: Introductionmentioning

confidence: 99%

The Properties of p-GaN with Different Cp2Mg/Ga Ratios and Their Influence on Conductivity

Shang

Liang

et al. 2016

Journal of Elec Materi

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The effect of Cp 2 Mg/Ga ratio on the properties of p-GaN was explored by scanning Hall probe, photoluminescence (PL), and atomic force microscopy measurement. It was found that p-GaN has an optimal doping concentration under 2% Cp 2 Mg/Ga ratio, and higher or lower doping concentration is not beneficial to the conductivity. Hole concentration under the optimum condition is 4.2 9 10 17 cm À3 at room temperature. If the Cp 2 Mg/Ga ratio exceeds the optimum value of 2%, surface morphology and electrical conduction properties become poor, and blue emission at 440 nm, considered deep donorto-acceptor pair transitions in the PL spectra, are dominant. The decrease in electrical properties indicates the existence of compensating donors because the hole concentration decreases at such high Cp 2 Mg/Ga ratio. The obtained results indicate that Mg is not incorporated in the exact acceptor site under a heavy doping condition, but acts as a deep donor, instead.

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Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition

Cited by 42 publications

References 26 publications

Effects of Mg fluctuation on the electrical and optical properties in p‐GaN/undoped GaN layers dependent on the growth temperature

Effects of Mg fluctuation on the electrical and optical properties in p‐GaN/undoped GaN layers dependent on the growth temperature

Review of using gallium nitride for ionizing radiation detection

The Properties of p-GaN with Different Cp2Mg/Ga Ratios and Their Influence on Conductivity

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