Characterization of N type Si doped ZnO and ZnO thin films deposited by RF magnetron sputtering

Claypoole, Jesse; Altwerger, Mark; Flottman, Spencer; Efstathiadis, Harry

doi:10.1109/nanotech.2018.8653571

Cited by 2 publications

(1 citation statement)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…ZnO thin films can have different properties by doping with the help of metal elements such as Sn, Ga, In [18], S1 [19], Mg [20], Ag [21], Sa [22] and Al [23], [24]. In previous studies, it was found that the electrical conductivity of the metal-doped ZnO molecule increased [25] and that its optical properties changed [26].…”

Section: Introductionmentioning

confidence: 99%

Production and Characterization of Al-Doped ZnO Thin Films with Sol-Gel Magnetic Spin Coating Technique

GÖZÜKIZIL

Temel

Özbay

2020

Sakarya University Journal of Science

View full text Add to dashboard Cite

In this study, ZnO thin films were developed by using Sol-Gel Spin Coating method which is simpler than other methods and by using low cost Sol-Gel Magnetic Spin Coating method which will be used for the first time in literature. Some physical properties of ZnO thin films produced by doping 1%, 3% and 5% Al were examined using X-Ray Diffraction (XRD) Device, Field Emission Scanning Electron Microscope (FESEM) and UV-Vis Spectrophotometer. When structural properties were examined, it was seen that preferential orientation changed and crystallite size values increased as Al doping amount increased. When the surface properties were examined, it was seen that a homogeneous coating was formed on the litter with the technique used. In addition, FESEM images prove that crystallite size values increase as the amount of doping increases. It was determined that the band gap values of thin films whose optical properties were examined decreased as the amount of doping increased. As it can be understood from these results, this thin film production technique, which is used for the first time in the literature, is able to produce doped thin films more easily and economically.

show abstract