Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates

Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga2O3 UV Detector via Impurity-Level Transition and Multiple Carrier Transport

“…The low growth speed of the Sn:Ga 2 O 3 thin film may be caused by the minor variation of the density of the solution, which may greatly reduce the efficiency of mist generation. 30 For further investigation of the elements in the Sn:Ga 2 O 3 thin film, XPS was performed, and the corresponding XPS spectrum is shown in Figure 3a. According to the XPS result, the ratio of Sn to Ga + Sn is 6.7%, and binding energies of Ga 2p 1/2 , Ga 2p 3/2 , Sn 3d, and O 1s are 1144.91, 1118.07, 485.77, and 530.17 eV, respectively.…”

“…It can be deduced from the cross-sectional SEM image that the thickness of the thin film is ∼700 nm, indicating a growth speed of 1.4 μm/h. The low growth speed of the Sn:Ga 2 O 3 thin film may be caused by the minor variation of the density of the solution, which may greatly reduce the efficiency of mist generation …”

Influence of Growth Parameters on a‐Plane InGaN/GaN Heterostructures on r‐Sapphire

“…Table compares the results obtained in the present work with other on the a‐GaN on r‐sapphire growth. The methods for improving the films quality that are used in these works such as various buffer layers and lateral overgrowing are pointed out . FWHM of X‐ray diffraction peak is a usually used for crystal quality comparison, however, in a‐GaN there is a FWHM anisotropy , therefore only FWHM in direction are presented in Table .…”

“…The results which were obtained by current method are comparable with the results obtained by lateral overgrowing; simultaneously our method is in‐situ. Moreover, in lateral growth, good quality material is obtained only on “wings.”…”

Joint effect of miscut r-plane sapphire substrate and different nucleation layers on structural characteristics of non-polar a-plane GaN films

“…6,7 The intense in-plane strain induced by a large difference in the lattice constant and thermal expansion coefficient between the r -plane sapphire substrate and a -plane GaN epitaxial layer can also result in cracks on the surface and the generation of crystal defects in the a -plane GaN film. 8 Several studies have been conducted to improve the crystalline quality of the GaN film by using SiN x interlayers, 9 patterned sapphire substrates, 10 epitaxial lateral overgrowth technique, 11 growth temperature optimization, 12 ammonothermal growth on HVPE-GaN seeds, 13 and ultra-high-pressure annealing treatment. 14 As for the alleviation of in-plane strain, effective attempts include co-doping of Mg–Si (ref.…”