Characterization of Si Nanocrystals

Yerci, Selçuk; Doğan, İlker; Seyhan, Ayşe; Gencer, A. I.; Turan, Raşit

doi:10.1002/9783527629954.ch21

Cited by 3 publications

(4 citation statements)

References 93 publications

(175 reference statements)

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“…(c) A high-resolution TEM image of SiQD–PS NC. (d) XPS survey spectrum of SiQD–PS NC; inset: Si 2p high-resolution spectrum; the experimental data (■) was fit to the dominant Si species with different oxidation states, according to ref 34.…”

Section: Results and Discussionmentioning

confidence: 99%

“…The existence of SiQDs in the nanocomposite was further confirmed by TEM and XPS analysis, shown in Figure c,d, respectively. In Figure c, SiQDs exhibit resolved lattice fringes with d-spacing of 2.7 Å, which could be attributed to the d(200) of the diamond cubic structured silicon . Because of the low z-contrast of silicon over carbon, it was difficult to visualize distinctly SiQDs in the presence of polystyrene from the SiQD–PS NC sample.…”

Section: Results and Discussionmentioning

confidence: 99%

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Newly Synthesized Silicon Quantum Dot–Polystyrene Nanocomposite Having Thermally Robust Positive Charge Trapping

Dũng

Choi

Jeong

2013

ACS Appl. Mater. Interfaces

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Striving to replace the well known silicon nanocrystals embedded in oxides with solution-processable charge-trapping materials has been debated because of large scale and cost effective demands. Herein, a silicon quantum dot-polystyrene (SiQD-PS) nanocomposite (NC) was synthesized by post-functionalization of hydrogen-terminated silicon quantum dots (H-SiQDs) with styrene using a thermally induced surface-initiated polymerization approach. The NC contains two miscible components: PS and SiQD@PS which, respectively, are polystyrene and polystyrene chains-capped SiQDs. Spin-coated films of the nanocomposite on various substrate were thermally annealed at different temperatures and subsequently used to construct metal-insulator-semiconductor (MIS) devices and thin film field-effect transistors (TFTs) having a structure of p-Si++/SiO2/NC/pentacene/Au source-drain. Capacitance-voltage (C-V) curves obtained from the MIS devices exhibit a well-defined counterclockwise hysteresis with negative fat band shifts, which was stable over a wide range of curing temperatures (50-250 °C). The positive charge trapping capability of the NC originates from the spherical potential well structure of the SiQD@PS component while the strong chemical bonding between SiQDs and polystyrene chains accounts for the thermal stability of the charge trapping property. The transfer curve of the transistor was controllably shifted to the negative direction by varying applied gate voltage. Thereby, this newly synthesized and solution processable SiQD-PS nanocomposite is applicable as charge trapping materials for TFT based memory devices.

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Section: Results and Discussionmentioning

confidence: 99%

Section: Results and Discussionmentioning

confidence: 99%

Newly Synthesized Silicon Quantum Dot–Polystyrene Nanocomposite Having Thermally Robust Positive Charge Trapping

Dũng

Choi

Jeong

2013

ACS Appl. Mater. Interfaces

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“…The dependence of Raman peak position on nanoparticle diameter gives possibility to employ Raman spectroscopy for nanoparticles size measurements. Experimental Raman studies followed by analysis of obtained spectra in the framework of PCM were provided previously for diamond (see [3] and references there), germanium [4,5], silicon [6] nanoparticles.…”

Section: Mainmentioning

confidence: 99%

New explanation of Raman peak redshift in nanoparticles

Meilakhs

Koniakhin

2017

Superlattices and Microstructures

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In this letter, we propose a new model that explains the Raman peak downshift observed in nanoparticles with respect to bulk materials. The proposed model takes into account discreteness of the vibrational spectra of nanoparticles. For crystals with a cubic lattice (Diamond, Silicon, Germanium) we give a relation between the displacement of Raman peak position and the size of nanoparticles. The proposed model does not include any uncertain parameters, unlike the conventionally used phonon confinement model (PCM), and can be employed for unambiguous nanoparticles size estimation. MainIn nanoparticles the crystalline Raman peak position is downshifted and asymmetrically broadened with respect to bulk materials. Previously the * kon@mail.ioffe.ru 1 arXiv:1602.00114v1 [cond-mat.mes-hall]

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“…This could have lower performances, which implies other than high-speed interconnect applications, but should be cheaper and easier to fabricate within a standard CMOS factory. Among different possibilities, silicon nanocrystals (Si-NC) show interesting optoelectronic properties [6]. Si-NC-based light emitting diodes (LEDs) have been fabricated with standard CMOS processing.…”

mentioning

confidence: 99%

Silicon nanocrystal light emitting device as a bidirectional optical transceiver

Marconi

Anopchenko

Pucker

et al. 2011

Semicond. Sci. Technol.

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An all-silicon light emitting and detecting device is described here. It is based on a nanocrystalline-silicon light emitting diode (Si-NC LED). The Si-NC LED has up to 0.2% external power efficiency, when forward biased, while it has a photoresponsivity of up to 1 mA W −1 when reverse biased. Therefore, the very same device can be used as a transmitter and receiver node of an optical link. We demonstrate a power loss of 10 −3 % and a modulation speed of up to 10 kbit s −1 by connecting two Si-NC LEDs by a multimode optical fiber.

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Characterization of Si Nanocrystals

Cited by 3 publications

References 93 publications

Newly Synthesized Silicon Quantum Dot–Polystyrene Nanocomposite Having Thermally Robust Positive Charge Trapping

Newly Synthesized Silicon Quantum Dot–Polystyrene Nanocomposite Having Thermally Robust Positive Charge Trapping

New explanation of Raman peak redshift in nanoparticles

Silicon nanocrystal light emitting device as a bidirectional optical transceiver

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