Characterization of ZnO thin film grown on c-plane substrates by MO-CVD: Effect of substrate annealing temperature, vicinal-cut angle and miscut direction

Boukadhaba, M.A.; Fouzri, A.; Sallet, Vincent; Hassani, Saïd; Amiri, G.; Lusson, A.; Oumezzine, M.

doi:10.1016/j.spmi.2015.07.020

Cited by 17 publications

(5 citation statements)

References 42 publications

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“…Boukadhaba et al revealed the morphology of ZnO grown via MOCVD at a high temperature of 900 °C with helium as the carrier gas. DEZn and nitrous oxide N 2 O were selected as zinc and oxygen sources, respectively . XRD patterns of the ZnO thin films grown on c -plane sapphire substrates exhibited the (0001) orientation with the wurtzite phase.…”

Section: Fabrication Methodsmentioning

confidence: 99%

“…DEZn and nitrous oxide N 2 O were selected as zinc and oxygen sources, respectively. 66 XRD patterns of the ZnO thin films grown on c-plane sapphire substrates exhibited the (0001) orientation with the wurtzite phase. Kirchner et al investigated the effects of reactor pressure and deposition temperature on ZnO growth rate; they discovered that the ZnO growth rate was proportional to the reactor pressure and reached a maximum rate at 400 mbar.…”

Section: Fabrication Methodsmentioning

confidence: 99%

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Robust and Electrically Conductive ZnO Thin Films and Nanostructures: Their Applications in Thermally and Chemically Harsh Environments

Yan

Takahashi

Zeng

et al. 2021

ACS Appl. Electron. Mater.

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Harsh electronics", which are designed to operate under harsh environments, have garnered significant attention to collect various physical and chemical information in surroundings toward the Internet of Things era. Among various electronic materials and structures, ZnO thin films, which consist of an abundant resource, have been intensively investigated because of their unique electrical and optical properties. However, ZnO thin films have been regarded as chemically nonresistive to harsh environments (e.g., high temperatures, high humidity, and acidic and basic conditions). Herein, we present recent progress and advances in electrically conductive ZnO thin films and nanostructures for applications in harsh electronics. First, various fabrication methods and progresses for achieving high-quality ZnO nanomaterials are introduced. Subsequently, previously reported approaches for enhancing the reliability and stability of ZnO nanostructures in harsh electronics are compared. Strategies for fabricating robust ZnO materials and ZnO-based electronics are discussed on the basis of several proposed mechanisms. Finally, we describe the current limitation, perspective, and outlook for future developments of ZnO nanostructures for use in harsh electronics.

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Section: Fabrication Methodsmentioning

confidence: 99%

Section: Fabrication Methodsmentioning

confidence: 99%

Robust and Electrically Conductive ZnO Thin Films and Nanostructures: Their Applications in Thermally and Chemically Harsh Environments

Yan

Takahashi

Zeng

et al. 2021

ACS Appl. Electron. Mater.

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“…Sekarang ini, film tipis ZnO telah intensif diteliti karena sifat-sifatnya yang menarik, seperti transmitansi tinggi, tidak beracun, memiliki stabilitas kimia dan panas yang baik, serta biaya yang lebih murah dibanding ITO [2][3] . Selain itu, ZnO adalah semikonduktor tipe-n dengan struktur heksagonal wurtzite yang memiliki celah pita langsung (direct band-gap) yang lebar (3,34 eV) dan eksiton energi ikat yang tinggi pada suhu ruang (60 meV) [4] . Film tipis ZnO memiliki transmitansi di daerah cahaya tampak yang sangat tinggi (lebih dari 85%) [5] dengan nilai resistivitas dalam rentang sedang-tinggi 10 -4 Ω [1] .…”

Section: Pendahuluanunclassified

“…Film tipis ZnO maupun ZnO doping telah dideposisikan dengan berbagai macam teknik, seperti sputtering [5][6][7] , MBE (molecular beam epitaxy) [8] , CVD (chemical vapor deposition) [9] , MOCVD (metal organic chemical vapor deposition) [4] , electrochemical deposition [10] , pulsed laser deposition [11] , sol-gel [12][13] dan spray [12,[14][15][16][17][18] . Dibandingkan dengan teknik lain, spray merupakan teknik yang sederhana, tidakvakum dan murah [17] .…”

Section: Pendahuluanunclassified

Perlakuan Panas Ganda pada Fabrikasi Film Tipis AZO Nanokristal dengan Teknik Spray : Studi XRD [Double Heat Treatments On The Fabrication Of Nanocrystalline Azo Thin Films By Spray Technique: XRD Studies]

Aryanto¹,

Husniya²,

Sudiro³

et al. 2017

metal.

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IntisariKarakterisasi XRD telah digunakan untuk mempelajari efek perlakuan panas tunggal dan ganda pada fabrikasi film tipis ZnO doping Al (AZO) nanokristal yang dideposisikan dengan teknik spray. Pada perlakuan panas tunggal, film tipis AZO nanokristal dengan struktur polikristal heksagonal wurtzite terbentuk pada suhu 500 °C dan 600 °C. Peningkatan suhu menyebabkan peningkatan ukuran kristal dan pengurangan kerapatan dislokasi. Perlakuan panas ganda pada film tipis AZO nanokristal mengakibatkan perubahan kecil pola difraksi. Hal ini mengindikasikan bahwa parameter kristal film tipis AZO nanokristal berubah setelah mendapat perlakuan panas kedua. Film tipis AZO nanokristal yang diberikan perlakuan panas pada suhu 500 °C dalam lingkungan udara dan dilanjutkan hingga suhu 600 °C dalam kondisi vakum memperlihatkan bahwa rata-rata ukuran kristal berkurang dan muncul cacat kristal (regangan dan kerapatan dislokasi meningkat). Hasil yang berbeda ditunjukkan pada film tipis AZO nanokristal yang diberikan perlakuan panas pada suhu 600 °C dalam lingkungan udara kemudian dilanjutkan dengan suasana vakum. Kualitas kristal film tipis AZO nanokristal meningkat, yang diindikasikan dengan peningkatan ratarata ukuran kristal, berkurangnya nilai regangan dan kerapatan dislokasi. Berdasarkan pada hasil yang didapat, perlakuan panas ganda berpengaruh pada parameter dan kualitas kristal film tipis AZO nanokristal yang dideposisikan dengan teknik spray.

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“…The zinc oxide thin films have been prepared and synthesized by using different physical and chemical methods and techniques [14]. These methods include the chemical bath deposition method (CBD), pulsed laser deposition (PLD), molecular beam epitaxy (MBE), radio frequency (RF) magnetron sputtering technique, physical vapor deposition (PVD) technique, metal-organic chemical vapor deposition (MO-CVD), spray pyrolysis (SP), sol-gel method, hydrothermal method, an ultrasonic spray method [15][16][17][18]. Notwithstanding, the PVD technique is a very simple, low-cost, reproducible, and easy technique that can be utilized and scaled up for the synthesis of a large range and types of different ZnO nanostructures such as nanorings, nanohelixes, nanowires, nanoparticles, nanobelts, thin films, nanorods, and nanoneedles [19].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterizations of ZnO Thin Films Grown by Physical Vapor Deposition Technique

Mohammed

Ahmed

Abdulrahman

et al. 2020

JASTT

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In the current study, Zinc oxide (ZnO) thin films have been synthesized over the whole the glass-slide substrate by utilizing the physical vapor deposition (PVD) technique. The Zinc (Zn) seed layer was deposited by heating the high purity Zn powder by using a molybdenum (Mo) boat at 37.503×10-3 Torr vacuum pressure of the PVD chamber. The ZnO thin films were fabricated by oxidation of the Zn seed layer coated glass-slide substrate at 400 °C. The morphological, chemical compositions, crystal quality, structural and optical properties of fabricated ZnO thin film were characterized and studied utilizing several characterization techniques. The results found that the high distribution density, homogenous, uniform, and high-quality ZnO thin film was grown over the entire substrate. The synthesized ZnO thin film with a thickness of 130 nm was grown with high purity and polycrystalline hexagonal-Wurtzite phase of ZnO. The sharp, and dominant diffraction peak was observed at peak position 34.3375 along (002) plane and c-axis. The investigated crystal size, dislocation density, and interplanar spacing were about 13.33 nm, 5.63×10-5 A°, and 2.609 A°, respectively. Also, UV-visible spectroscopy results show the high transmittance and low absorbance in the visible (Vis.) region and were about 90%, and the transmittance decreases sharply near the UV region at a wavelength around 383 nm. Besides, obtained the energy band-gap (Eg) was about 3.24 eV.

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Characterization of ZnO thin film grown on c-plane substrates by MO-CVD: Effect of substrate annealing temperature, vicinal-cut angle and miscut direction

Cited by 17 publications

References 42 publications

Robust and Electrically Conductive ZnO Thin Films and Nanostructures: Their Applications in Thermally and Chemically Harsh Environments

Robust and Electrically Conductive ZnO Thin Films and Nanostructures: Their Applications in Thermally and Chemically Harsh Environments

Perlakuan Panas Ganda pada Fabrikasi Film Tipis AZO Nanokristal dengan Teknik Spray : Studi XRD [Double Heat Treatments On The Fabrication Of Nanocrystalline Azo Thin Films By Spray Technique: XRD Studies]

Synthesis and Characterizations of ZnO Thin Films Grown by Physical Vapor Deposition Technique

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