Characterizing the capacitance of different c-Si PV cell technologies using impedance spectroscopy

Nijen, David van; Manganiello, Patrizio; Muttillo, Mirco; Zeman, Miro; Isabella, Olindo

doi:10.1109/pvsc48317.2022.9938613

Cited by 2 publications

(3 citation statements)

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“…This encompasses both NMOS devices on p‐type substrates and PMOS devices on n‐type substrates. While in solar cells there is a certain flexibility in the choice of substrate dopant density, [ 24 ] it is important to acknowledge that for COSMOS devices the choice of substrate has an important effect on certain transistor characteristics, such as the threshold voltage. To achieve better control over the MOSFET characteristics, techniques like epitaxial layer growth or localized doping adjustments through implantation could be considered.…”

Section: Theoretical Backgroundmentioning

confidence: 99%

“…[19][20][21] Another approach aims to exploit the inherent capacitive and inductive properties of solar cells. [22][23][24] On the one hand, the integration of PE components into PV cells includes challenges such as thermal management and repairability. [18] On the other hand, the integration approach includes several significant advantages.…”

Section: Introductionmentioning

confidence: 99%

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Combined Fabrication and Performance Evaluation of TOPCon Back‐Contact Solar Cells with Lateral Power Metal‐Oxide‐Semiconductor Field‐Effect Transistors on a Single Substrate

van Nijen,

Stevens,

Mercimek

et al. 2024

Solar RRL

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Nowadays, an increasing share of photovoltaic (PV) systems makes use of module‐ or sub‐module‐level power electronics (PE). Furthermore, PE is used in stand‐alone devices powered by PV‐storage solutions. One way to facilitate further implementation of PE in PV applications is to integrate PE components into crystalline silicon PV cells. In this work, we introduce the COSMOS device, denoting COmbined Solar cell and MOSFET. Specifically, we report the combined manufacturing of lateral power MOSFETs and interdigitated back contact solar cells with tunnel‐oxide passivated contacts (TOPCon) on a single wafer. Many steps of the proposed process flow are used for the fabrication of both devices, enabling cost‐effective integration of the MOSFET. Both n‐type solar cells with integrated p‐channel MOSFETs (PMOS) and p‐type solar cells with integrated n‐channel MOSFETs (NMOS) are successfully manufactured. NMOS devices perform better in achieving low on‐resistance, while PMOS devices exhibit lower leakage currents. Furthermore, the study reveals integration challenges where off‐state leakage currents of the MOSFET can increase due to illumination and specific configurations of monolithic interconnections between the MOSFET and the solar cell. Nevertheless, for both n‐type and p‐type solar cells, efficiencies exceeding 20% are achieved, highlighting the potential of the proposed process for COSMOS devices.This article is protected by copyright. All rights reserved.

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Section: Theoretical Backgroundmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Combined Fabrication and Performance Evaluation of TOPCon Back‐Contact Solar Cells with Lateral Power Metal‐Oxide‐Semiconductor Field‐Effect Transistors on a Single Substrate

van Nijen,

Stevens,

Mercimek

et al. 2024

Solar RRL

Self Cite

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“…S out (f ) is the peak-to-peak signal at each frequency f . The frequency at -3 dB gain is the bandwidth since the solar cell is a low-pass filter [9]. This frequency sweep is repeated for a few operating points from 100 mV to the open-circuit condition under different LED colors and intensities.…”

Section: Receiver Circuitmentioning

confidence: 99%

Bandwidth Characterization of c-Si Solar Cells as VLC Receiver under Colored LEDs

Zhou,

Ibrahim,

Muttillo

et al. 2023

2023 8th International Conference on Smart and Sustainable Technologies (SpliTech)

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This paper presents the fundamental study on the relationship between LED light sources and the performance of solar cell as receivers in visible light communication (VLC) links. Here, different colors of LEDs are modulated with a sinusoidal signal, and the bandwidth of the VLC system based on various c-Si PV architectures is characterized at different bias voltages. The preliminary results show that the bandwidth of such VLC system is highly influenced by the bias voltage, where higher bias voltage leads to lower bandwidth. This means that there is a tradeoff between energy harvesting and communication performance when solar cells are used as VLC receivers. Meanwhile, we also observed that the bandwidth decreases as the LED irradiance level increases, and the color of LED (currently red and blue LEDs are characterized) does not pose a significant impact on the bandwidth. The highest bandwidth is found at 50 kHz for a VLC system using a 6-in TOPCON solar cell under 100 W/m 2 with 100 mV bias voltage.

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Characterizing the capacitance of different c-Si PV cell technologies using impedance spectroscopy

Cited by 2 publications

References 0 publications

Combined Fabrication and Performance Evaluation of TOPCon Back‐Contact Solar Cells with Lateral Power Metal‐Oxide‐Semiconductor Field‐Effect Transistors on a Single Substrate

Combined Fabrication and Performance Evaluation of TOPCon Back‐Contact Solar Cells with Lateral Power Metal‐Oxide‐Semiconductor Field‐Effect Transistors on a Single Substrate

Bandwidth Characterization of c-Si Solar Cells as VLC Receiver under Colored LEDs

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