Jpn. J. Appl. Phys.
 2003
DOI: 10.1143/jjap.42.6795
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Characterizing Trench-Gate Power Metal–Oxide–Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom

Ming Lin
1
,
Chorng-Wei Liaw
2
,
Fang Long Chang
3
et al.
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