Charge Reservoirs in an Expanded Halide Perovskite Analog: Enhancing High‐Pressure Conductivity through Redox‐Active Molecules

Abstract

As halide perovskites and their derivatives are being developed for numerous optoelectronic applications, controlling their electronic doping remains a fundamental challenge. Herein, we describe a novel strategy of using redox‐active organic molecules as stoichiometric electron acceptors. The cavities in the new expanded perovskite analogs (dmpz)[Sn2X6], (X=Br− (1Br) and I− (1I)) are occupied by dmpz2+ (N,N′‐dimethylpyrazinium), with the LUMOs lying ca. 1 eV above the valence band maximum (VBM). Compressing the metal‐halide framework drives up the VBM in 1I relative to the dmpz LUMO. The electronic conductivity increases by a factor of 105 with pressure, reaching 50(17) S cm−1 at 60 GPa, exceeding the high‐pressure conductivities of most halide perovskites. This conductivity enhancement is attributed to an increased hole density created by dmpz2+ reduction. This work elevates the role of organic cations in 3D metal‐halides, from templating the structure to serving as charge reservoirs for tuning the carrier concentration.