2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)
DOI: 10.1109/vlsic.2003.1221230
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Charge-transferred presensing and efficiently precharged negative word-line schemes for low-voltage DRAMs

Jaesung Sim
1
,
Young-Gu Gang
2
,
Kyu-Nam Lim
3
et al.
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