Chemical Mechanical Planarization: Slurry Chemistry, Materials, and Mechanisms

Krishnan, M.; Nalaskowski, Jakub; Cook, Lee M.

doi:10.1021/cr900170z

Cited by 408 publications

(293 citation statements)

References 118 publications

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“…Indeed, the calculated expansion is 6%, which is in excellent agreement with those experimental measurements. 3. The general process used was as follows.…”

Section: Results (A) One Nanometre Particlementioning

confidence: 99%

“…Ceria, CeO 2 , and its various micro-and nanoparticle (NP) formulations, are fast gaining a reputation as a 'super-material', as they are found in many diverse applications, such as automobile and truck catalytic converters [1], chemical mechanical polishing agents for optical elements [2], chemical mechanical planarization materials for semiconductor wafers [3], solid oxide fuel cells [4] and diesel fuel additives which are claimed to mitigate emissions and improve fuel economy (e.g. Platinum Plus R from Clean Diesel Technologies Inc, Envirox R from Oxonica Materials Limited and GO 2 R from Cerion Energy [5][6][7]).…”

Section: Introductionmentioning

confidence: 99%

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Simulations of ceria nanoparticles

et al. 2015

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Atomistic computer simulations, using classical potential models, have been used to model ceria nanoparticles (NPs) with diameters of approximately 1 and 2 nm. Lattice expansion is observed in the stoichiometric 1 nm NP, consistent with experiment, indicating that reduction is not the primary driver for such expansion. Furthermore, on reduction, the 1 nm NP is found to distort significantly, offering a possible explanation for its reduced oxygen storage capacity compared to the 2 nm NP. Point defect calculations on the 2 nm NP indicate that while doping with La is energetically favourable, Fe incorporation is not.

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“…Indeed, the calculated expansion is 6%, which is in excellent agreement with those experimental measurements. 3. The general process used was as follows.…”

Section: Results (A) One Nanometre Particlementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Simulations of ceria nanoparticles

et al. 2015

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“…These aspects of metal CMP have been widely studied for back-end-of-line (BEOL) integration of Cu interconnects. 2 FEOL processing now includes metal gate CMP, and the use of metal CMP is also found in the MOL process, where a local "routing" contact replaces the traditional wiring between the BEOL and the FEOL.…”

Section: Device Scaling and Cmp Considerationsmentioning

confidence: 99%

Perspective—Electrochemical Assessment of Slurry Formulations for Chemical Mechanical Planarization of Metals: Trends, Benefits and Challenges

Roy¹

2018

ECS J. Solid State Sci. Technol.

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With continued shrinkage of circuit dimensions, the technique of chemical mechanical planarization (CMP) has become progressively more intricate through the last decade. Since the chemical mechanism of metal CMP is governed by electrochemical effects, the complex task of CMP-slurry engineering can be economically assisted in the electroanalytical approach by using laboratory scale model systems. This article discusses how CMP has been impacted by device scaling, and examines the status of fundamental studies of metal CMP. The techniques suitable for studying model CMP systems are discussed, along with an assessment of the utilities and the practical limits of such experiments. Chemical mechanical planarization (CMP) is an essential processing step of integrated circuit (IC) fabrication. 1,2 CMP of the metal components of logic devices constitute a major aspect of this technique and, like other areas of IC manufacturing, metal CMP has become quite complex while addressing the emerging demands of technology through the last decade. 3 The new challenges of metal CMP originate from both the scaling and the novel material aspects of these systems. 3,4 At the same time, published reports indicate that, many of these issues, especially those related to the slurry consumables, 5 can be addressed to a large extent through electroanalytical examinations of slurry functions using scaled down models of actual CMP systems. 6 Recent studies performed in industrial facilities have also identified a critical need to further advance the fundamental understanding of metal CMP. 7,8 The present article provides a perspective on these fundamental research aspects of metal CMP that are in the core of most laboratory scale studies of these systems. Device Scaling and CMP ConsiderationsThe International Technology Roadmap for Semiconductors (ITRS) specified the earlier technology nodes in terms of the DRAM half-pitch (hp), or the microprocessor's level-1 metal hp of a device. 9 Basically until the 65 nm node, the shrinkage of feature-size has continued in line with Dennard scaling, by a factor (S) of 1/ √ 2, to accommodate doubling of transistors per unit chip area (scaling as S 2 = 1/2) every two years in relation to Moore's law. 10 Increased leakage currents in the subsequent feature reductions have eventually shifted this technology trend, with the emergence of advanced multicore systems. 11 While the scaling factor of 1/ √ 2 has been largely maintained in the post-Dennard period, the newer logic devices have evolved in a more complex manner compared to their earlier counterparts. The middle-of-line (MOL) metallization scheme has emerged from the need to reduce the parasitic effects of active wiring that extends over 4 km cm −2 for >13 metal layers. 9 Novel diffusion barriers and ultra-low-k (ULK) dielectrics, Fin field effect transistors (Fin-FETs), high-k gate dielectrics, and exploratory designs/materials for local interconnects have been steadily incorporated in new device architectures in keeping with the advents of scaling sch...

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“…A schematic of CMP system sees literature (Krishnan et al, 2010). In the CMP process, a rotating wafer is pressed face down onto a rotating polishing pad at a proper pressure.…”

Section: Introductionmentioning

confidence: 99%

Study on Contact Forms in Wafer Chemical Mechanical Polishing in Nanomachining

Jianxiu¹

2010

American Journal of Nanotechnology

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Chemical Mechanical Polishing (CMP) has become the most widely used planarization technology in the semiconductor manufacturing process. Problem statement: Studying the Contact Forms in Wafer Chemical Mechanical Polishing. Approach: A series test on the abrasion behavior and the lubricating behavior was conducted and then the test results were investigated by the abrasion and lubrication theory. Results: By the test results and analysis, it showed that the Material Removal Rate (MRR) was mainly due to the interaction between abrasives and polishing slurry and the main material removal of wafer surfaces was two bodies abrasive wear under chemical interaction. By the Stribeck curves obtained, the lubrication state in CMP interface is belong to the boundary lubrication and the material removal is the process of bringing and removed of the chemical reaction boundary lubricating film on wafer surface constantly. Conclusion: By the analysis results, it was concluded that the contact form between the Wafer and the polishing pad is the solid-solid contact. These results will provide theoretical guide to further understand the material removal mechanism of in wafer CMP.

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Chemical Mechanical Planarization: Slurry Chemistry, Materials, and Mechanisms

Cited by 408 publications

References 118 publications

Simulations of ceria nanoparticles

Simulations of ceria nanoparticles

Perspective—Electrochemical Assessment of Slurry Formulations for Chemical Mechanical Planarization of Metals: Trends, Benefits and Challenges

Study on Contact Forms in Wafer Chemical Mechanical Polishing in Nanomachining

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