1976
DOI: 10.1002/chin.197640006
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ChemInform Abstract: EFFECT OF III V RATIO ON THE PROPERTIES OF VAPOR PHASE EPITAXIAL GALLIUM PHOSPHIDE

Abstract: In einer Reihe von Experimenten wird das III / V‐Verhältnis in der Eingangsgasphase (PH3 ‐HCl‐Ga‐ H2) systematisch von 0,3 bis 10 verändert (Substrattemperatur 840°C).

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