1993
DOI: 10.1002/chin.199315004
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ChemInform Abstract: In situ Growth of Epitaxial YAlO3 Thin Films by Metal‐Organic Chemical Vapor Deposition.

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(2 citation statements)
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“…Cross-sectional HRTEM and selected area diffraction of the NdGa03 films show atomically abrupt film-substrate interfaces as well as two growth domains consisting of proximate regions having (001) and (110) growth orientations. These show only one growth orientation, (OOl), by XRD [293]. A cross-sectional HRTEM (Fig.…”
Section: Cvd Of Hts Lattice-matched Metal Oxidesmentioning
confidence: 99%
See 1 more Smart Citation
“…Cross-sectional HRTEM and selected area diffraction of the NdGa03 films show atomically abrupt film-substrate interfaces as well as two growth domains consisting of proximate regions having (001) and (110) growth orientations. These show only one growth orientation, (OOl), by XRD [293]. A cross-sectional HRTEM (Fig.…”
Section: Cvd Of Hts Lattice-matched Metal Oxidesmentioning
confidence: 99%
“…Thin films of NdGa03 have been grown on (110) LaA103 by MOCVD using a two-step process: deposition of amorphous Nd-Ca-0 films using Nd(dpm)3 and Ga(dpm)3 as precursors, followed by a post-anneal in 0 2 at 750-1 000°C to induce crystallization [291]. The formation of (001) and (110) growth domains has also been observed by HRTEM for MOCVD-derived YA103 thin films grown epitaxially on LaAI03 in situ using Y(dpm)3 and Al(acac)3 as precursors [292]. Cross-sectional HRTEM and selected area diffraction of the NdGa03 films show atomically abrupt film-substrate interfaces as well as two growth domains consisting of proximate regions having (001) and (110) growth orientations.…”
Section: Cvd Of Hts Lattice-matched Metal Oxidesmentioning
confidence: 99%