ChemInform Abstract: Selective Chemically Assisted Ion Beam Etching of Si, Polysilicon, and SiO2 Using Ni‐Cr Masks and Cl2.

Abstract

A chemically assisted ion beam etching process with Cl2 as the reactive gas is described and etch rates are measured for Si, polysilicon, SiO2, and Ni‐Cr etching as a function of ion beam current density, ion beam energy, and Cl2 flow rates.