ChemInform Abstract: Synthesis and Thermal Behavior of Novel Si—B—C—N Ceramic Precursors.

Abstract

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Magnetron sputtered Si–B–C–N films with high oxidation resistance and thermal stability in air at temperatures above 1500 °C

“…Figure 3͑b͒ shows extraordinarily high oxidation resistance of the Si-B-C-N film prepared using the corresponding B 4 C -Si target under the same deposition conditions. 2,3 The HRTEM cross-sectional images ͑Fig. 2͒, slightly lower quality of the film surface indicated in the case of the applied C-Si-B target should be considered to understand the results in Fig.…”

“…7,9,10 They can provide a unique combination of properties, such as very high thermal stability and oxidation resistance, 1-5,11 high hardness, 8 low thermal conductivity, 2 low thermal expansion coefficient, 2 low internal stress, 7,8,12,13 and good adhesion to various substrates. [1][2][3][4][5]9 Despite the valuable results obtained, this method presents certain disadvantages, namely, high process temperatures ͑1000-1400°C͒ and a relatively high abundance of pores in the materials. 9,15 Most of the published works on Si-B-C-N materials dealt with preparation of Si-B-C-N ceramics using thermolysis of polymeric precursors.…”

“…[6][7][8] In addition, the Si-B-C-N films can exhibit a high optical transparency 14 and promising electronic properties. 2,3 Few publications dealt with Si-B-C-N films prepared by chemical vapor deposition techniques, 6,7 resulting in degradation of some material properties due to a large content of hydrogen from the precursors. [1][2][3][4][5]9 Despite the valuable results obtained, this method presents certain disadvantages, namely, high process temperatures ͑1000-1400°C͒ and a relatively high abundance of pores in the materials.…”