Cherry-Hooper amplifiers with 33 dB gain at 400 kHz BW and 10 dB gain at 3.5 MHz BW in flexible self-aligned a-IGZO TFT technology

Shabanpour, R.; Meister, Tilo; Ishida, Koichi; Kheradmand‐Boroujeni, Bahman; Carta, Corrado; Jorges, Udo; Ellinger, Frank; Petti, Luisa; Münzenrieder, Niko; Salvatore, Giovanni A.; Tröster, Gerhard

doi:10.1109/ispacs.2014.7024466

Cited by 14 publications

(7 citation statements)

References 14 publications

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“…This is achieved by their short channel length of 0.5 µm in combination with a low gate capacitance of 15 pF, and a state of the art contact resistance of 12 Ω cm. This demonstrates that such a technology can be used to realize conformable and unobtrusive communication systems, based on high speed amplifiers circuits [10], for the future internet of things.…”

mentioning

confidence: 93%

Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz

Münzenrieder

Ishida

Meister

et al. 2018

IEEE Electron Device Lett.

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Abstract-In this letter, the AC performance and influence of bending on flexible IGZO thin-film transistors, exhibiting a maximum oscillation frequency (maximum power gain frequency) fmax beyond 300 MHz, are presented. Self-alignment was used to realize TFTs with channel length down to 0.5 µm. The layout of this TFTs was optimized for good AC performance. Besides the channel dimensions this includes ground-signal-ground contact pads. The AC performance of this short channel devices was evaluated by measuring their two port scattering parameters. These measurements were used to extract the unity gain power frequency from the maximum stable gain and the unilateral gain. The two complimentary definitions result in fmax values of (304 ± 12) MHz and (398 ± 53) MHz, respectively. Furthermore, the transistor performance is not significantly altered by mechanical strain. Here, fmax reduces by 3.6 % when a TFT is bent to a tensile radius of 3.5 mm.

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mentioning

confidence: 93%

Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz

Münzenrieder

Ishida

Meister

et al. 2018

IEEE Electron Device Lett.

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“…To date, flexible sputtered IGZO n-type thin-film transistors (TFTs) can be reliably integrated into complex, flexible and large area analog circuits [4]- [6]. Even if remarkable performance can be achieved with flexible unipolar IGZO analog circuitry, key requirements like low power consumption, high gain, and .…”

Section: Introductionmentioning

confidence: 99%

Gain-Tunable Complementary Common-Source Amplifier Based on a Flexible Hybrid Thin-Film Transistor Technology

Petti¹,

Loghin²,

Cantarella³

et al. 2017

IEEE Electron Device Lett.

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Abstract-In this letter, we report a flexible complementary common-source (CS) amplifier comprising one p-type spraycoated single walled carbon nanotube and one n-type sputtered InGaZnO 4 thin-film transistor (TFT). Bottom-gate TFTs were realized on a free-standing flexible polyimide foil using a maximum process temperature of 150 °C. The resulting CS amplifier operates at 10 V supply voltage and exhibits a gain bandwidth product of 60 kHz. Thanks to the use of a p-type TFT acting as a tunable current source load, the amplifier gain can be programmed from 3.5 V/V up to 27.2 V/V (28.7 dB). To the best of our knowledge, this is the highest gain ever obtained for a flexible single-stage CS amplifiers.

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“…Based on IGZO technology, we have designed a TFT compact model [3], several RF amplifiers [4] and a fully integrated receiver [5]. A record speed was achieved with nanocrystalline Zinc Oxide (ZnO) TFTs [6].…”

Section: State Of the Artmentioning

confidence: 99%

“…One example is shown in Fig. 5, which is based on the Cherry Hopper concept [4]. As depicted in Fig.…”

Section: Device Modellingmentioning

confidence: 99%

Radio frequency electronics on plastic

Ellinger

Ishida

Shabanpour

et al. 2015

2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)

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Abstract-In this paper the recent progress of active high frequency electronics on plastic is discussed. This technology is mechanically flexible, bendable, stretchable and does not need any rigid chips. Indium Gallium Zinc Oxide (IGZO) technology is applied. At 2 V supply and gate length of 0.5 μm, the thin-film transistors (TFTs) yield a measured transit frequency of 138 MHz. Our scalable TFT compact simulation model shows good agreement with measurements. To achieve a sufficiently high yield, TFTs with gate lengths of around 5 μm are used for the circuit design. A Cherry Hopper amplifier with 3.5 MHz bandwidth, 10 dB gain and 5 mW dc power is presented. The fully integrated receiver covering a plastic foil area of 3 × 9 mm 2 includes a four stage cascode amplifier, an amplitude detector, a baseband amplifier and a filter. At a dc current of 7.2 mA and a supply of 5 V, a bandwidth of 2 -20 MHz and a gain beyond 15 dB were measured. Finally, an outlook regarding future advancements of high frequency electronics on plastic is given.

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Cherry-Hooper amplifiers with 33 dB gain at 400 kHz BW and 10 dB gain at 3.5 MHz BW in flexible self-aligned a-IGZO TFT technology

Cited by 14 publications

References 14 publications

Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz

Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz

Gain-Tunable Complementary Common-Source Amplifier Based on a Flexible Hybrid Thin-Film Transistor Technology

Radio frequency electronics on plastic

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