Abstract:We have observed a metal-insulator transition of a quasi-two dimensional electronic system in transition metal dichalcogenide 2H-TaSe 2 caused by doping iron. The sheet resistance of 2H-Fe x TaSe 2 (0 ≤ x ≤ 0.120) single crystals rises about 10 6 times with the increasing of x at the lowest temperature. We investigated the temperature dependence of the resistance and found a metal-insulator transition with a critical sheet resistance 11.7 ± 5.4 kΩ. The critical exponent of the localization length ν is estimate… Show more
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