Class DE high-efficiency tuned power amplifier

Koizumi, Hiroyuki; Suetsugu, Tadashi; Fujii, Masashi; Shinoda, K.; Mori, Susumu; Iked, K.

doi:10.1109/81.481461

Cited by 120 publications

(22 citation statements)

References 21 publications

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“…Among these, three topologies are often used in the VHF range; the class DE [22]- [24], SEPIC [25]- [27], and class E converter [28], [29], shown in fig. 2.…”

Section: A Converter Topologymentioning

confidence: 99%

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Integrated Very-High-Frequency Switch Mode Power Supplies: Design Considerations

Hertel

Nour

Knott

2018

IEEE J. Emerg. Sel. Topics Power Electron.

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Abstract-This paper presents a power supply using an increased switching frequency to minimize the size of energy storing components, thereby addressing the demands for increased power densities in power supplies. 100 MHz and higher switching frequencies have been used in resonant power converters, which along with the possible integration of passive components on silicon wafer, present a beneficial solution in applications such as mobile phones. This paper presents a design for a 9 W class E resonant power converter in an 0.18 µm CMOS process. The converter is driven by a self oscillating gate drive, which is presented in an in-depth mathematical analysis. The gate resistance of the designed transistors is of critical importance in order to achieve the correct phase shift required for zero-voltageswitching. The Z-parameter method is used to characterize the transistors which is verified through simulations. The required spiral inductors was modeled, and simulations show Q values of as high as 14 at a switching frequency of 250 MHz. Simulations of the converter show an efficiency of 55 % with a self oscillating gate drive. However the modeled inductor was not adequate for operating with the self oscillating gate drive, presenting a future challenge for power supplies on chip.

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“…Among these, three topologies are often used in the VHF range; the class DE [22]- [24], SEPIC [25]- [27], and class E converter [28], [29], shown in fig. 2.…”

Section: A Converter Topologymentioning

confidence: 99%

“…R ds,on , for V gs > V th (22) Another method to extract R ds,on is to use a DC currentsource connected at the drain, sweeping the gate voltage, and sampling the drain voltage. This gives some limitations to how the models work, because they are forced in saturation.…”

Section: Characterization Of Transistormentioning

confidence: 99%

Integrated Very-High-Frequency Switch Mode Power Supplies: Design Considerations

Hertel

Nour

Knott

2018

IEEE J. Emerg. Sel. Topics Power Electron.

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“…Class DE amplifier [1]- [10] has become an increasingly valuable high-density power source. In class DE amplifier, switch current is small and both of two switches satisfy class E switching conditions [11], [12].…”

Section: Introductionmentioning

confidence: 99%

“…In order to design of class DE amplifier, several analyses of class DE amplifier have been introduced until now [1]- [3]. The major interests of designers are how to determine element values of class DE amplifier for achieving class E switching conditions.…”

Section: Introductionmentioning

confidence: 99%

“…The theoretical results shows a quantitative agreement with the experimental ones, which denotes the validity of analytical equations. Figure 1 depicts the circuit topology of class DE amplifier [1]. It is composed of two switches S1 and S2, two capacitors CS1 and CS2 shunting each switch, and a series-resonant circuit L 0 − C 0 − R. The waveforms of class DE amplifier are shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

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Operation of class DE amplifier outside optimum condition

Sekiya

Negishi

Suetsugu

et al.

2006 IEEE International Symposium on Circuits and Systems

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Abstract-This paper presents exact analysis of class DE amplifier for any conditions including outside optimum conditions. We give a analytical expressions of waveform equations and initial values of current and voltage in the steady state. By using these analytical equations, switching voltage, output voltage and power conversion efficiency of class DE amplifier can be derived with few efforts. In this paper, we denote the steady state behaviors outside optimum conditions which occurs by the variations of operating frequency and switch on duty ratio. The theoretical results shows a quantitative agreement with the experimental ones, which denotes the validity of analytical equations.

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Class DE RF Power Amplifier

Kazimierczuk

2014

RF Power Amplifiers

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Class DE high-efficiency tuned power amplifier

Cited by 120 publications

References 21 publications

Integrated Very-High-Frequency Switch Mode Power Supplies: Design Considerations

Integrated Very-High-Frequency Switch Mode Power Supplies: Design Considerations

Operation of class DE amplifier outside optimum condition

Class DE RF Power Amplifier

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