Cleaning InSb wafers for manufacturing InSb detectors

Passivation of InSb surface for manufacturing infrared devices

“…The ion bombardment in a plasma discharge causes surface damage to the InSb and can alter the surface composition significantly. We speculate that we encounter the Sb In antisite during deposition and for this reason when we compare the Z-absorption with our previous work [5], we find the shift, i.e. 1.73 eV in Sb(3d5).…”

“…Based on the results of our previous work [5], to decrease the probability of growth of In x O y abd Sb x O y compounds and the amount of elemental Sb (Sb 0 ), for cleaning the n-type InSb (1 1 1) wafers with doping density equal to 3E14-2E15 cm À3 we used the CP4A (HNO 3 :CH 3-COOH:HF:H 2 O at 2:1:1:10) etchant.…”

“…[5]. After depositing 0.4 lm SiO 2 , 0.4 lm Si 3 N 4 and 0.5 lm Si 3 N 4 /SiO 2 layers, metallization process including Au/Cr with thicknesses 300 nm/50 nm was done on both sides of the wafer.…”

“…[5], and got atomic force microscope (AFM) images and energy-dispersive X-ray spectroscopy (EDX) results for setting up the flow rates of process gases. Then by doing photoemission spectroscopy (XPS) experiments we studied the effects of deposited layers on the characteristics of the semiconductor and finally by doing C-V measurements we studied the interface quality.…”

Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors

“…9,10 In addition, the cost of InSb substrates is far less than that of CdZnTe substrates. A variety of cleaning procedures including thermal desorption in the absence and in the presence of Sb overpressures, [11][12][13][14][15] atomic and molecular hydrogen treatments, [14][15][16][17] ion bombardment and annealing, 11,[18][19][20] and wet etches [21][22][23][24][25] have been reported to prepare InSb (111), (100), and (110) orientations. These studies address the problems associated with in vacuo thermal cleaning since the InSb oxide desorption temperature is close to the melting point of InSb ($527°C).…”