CMOS thermal sensing system with simplified circuits and high accuracy for Biomedical Application

Lee

2007 European Microwave Conference

et al. 2007

There is an increasing need to develop flexible, reconfigurable, and intelligent low power wireless sensor network (WSN) system for healthcare monitoring applications. Technical advancements in micro-sensors, micro electromechanical system (MEMS) devices, low power electronics, and radio frequency (RF) circuits and systems have enabled both design and development of such highly integrated system. In this paper, we present the wireless sensor network system, which is separated into control and data paths with different transmission frequencies. The control path sends the power and function control commands from computer to each sensor nodes by 2.4 GHz band. There are four levels in the WSN system. The data path transmits measured data from sensor layer to sensor group layer by 2.4 GHz, and transmits between sensor group, application and system layers by 60 GHz. This hierarchical architecture will make it possible to reconfigurable map application to WSN. The accurate pipeline control system will advance the performance efficiently, and the adaptive low power control system will reduce lots of power consumptions.

Section: 4ghz Rf Transceiver and Antennasmentioning

confidence: 99%

Wireless sensor network system by separating control and data path (SCDP) for bio-medical applications

Lee

2007 European Microwave Conference

et al. 2007

“…The adaptive multi-sensor CMOS system proposed by Huang et al [28] comprises different on-chip sensors including a temperature sensor which is using a pn junction to sense the body temperature. The lowcost CMOS thermal sensor chip for biomedical application presented by Lee et al is also employing a pn junction as temper ature sensing element [29]. Crepaldi et al proposed a low power CMOS transistors based thermal sensing element for biomedical application [30].…”

Section: Introductionmentioning

confidence: 99%

Self-sensing of temperature rises on light emitting diode based optrodes

et al. 2018

Objective. This work presents a method to determine the surface temperature of microphotonic medical implants like LEDs. Our inventive step is to use the photonic emitter (LED) employed in an implantable device as its own sensor and develop readout circuitry to accurately determine the surface temperature of the device. Approach. There are two primary classes of applications where microphotonics could be used in implantable devices; opto-electrophysiology and fluorescence sensing. In such scenarios, intense light needs to be delivered to the target. As blue wavelengths are scattered strongly in tissue, such delivery needs to be either via optic fibres, two-photon approaches or through local emitters. In the latter case, as light emitters generate heat, there is a potential for probe surfaces to exceed the 2 °C regulatory. However, currently, there are no convenient mechanisms to monitor this in situ. Main results. We present the electronic control circuit and calibration method to monitor the surface temperature change of implantable optrode. The efficacy is demonstrated in air, saline, and brain. Significance. This paper, therefore, presents a method to utilize the light emitting diode as its own temperature sensor.

“…Recent CMOS temperature sensors [1][2][3][5][6][7][8] have designed for the modern system-on-chip (SOC) integration. However most of these designs used the parasitic bipolar junction transistors (BJT) as the part of its proposed to absolute temperature (PTAT) circuitry.…”

Section: Introductionmentioning

confidence: 99%

A 69 μW CMOS smart temperature sensor with an inaccuracy of ±0.8°C (3σ) from −50°C to 150°C

Lee

Chiueh

2012

2012 IEEE Sensors

A proposed temperature sensor is based on pure CMOS PTAT circuitry, a preamplifier and a sigma delta ADC capable of simple and efficient temperature sensor conversion to digital value. The designed PTAT circuit utilized temperature compensation technology to enhance the linearity. The temperature sensor, which occupies 0.475 mm 2 , is fabricated using the TSMC 0.18 µm one-poly six-metal (1P6M) process. Measurement results show that the senor consume 46uA with a 1.5 V supply at 100 sample/s at room temperature. The sensor operates from -50°C to 150°C, archiving a 3σ resolution of ±0.8°C. 978-