CO2-laser induced annealing and diffusion in high energy As-ion-implanted silicon

Langfeld, Roland; Baumann, H.; Bethge, Κ.; Jex, H.

doi:10.1016/0375-9601(81)90936-1

Cited by 5 publications

(1 citation statement)

References 4 publications

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“…The introduced FIR-LA is an intraband excitation process [ 36 , 37 ]. It can selectively transfer energies to the free carriers and repairs defects or activates the dopants without damaging the top HK/MG nano-structure of a gate-first device.…”

Section: Resultsmentioning

confidence: 99%

Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits

Hsieh

Yang

et al. 2020

Micromachines

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We introduce a single-grain gate-all-around (GAA) Si nanowire (NW) FET using the location-controlled-grain technique and several innovative low-thermal budget processes, including green nanosecond laser crystallization, far-infrared laser annealing, and hybrid laser-assisted salicidation, that keep the substrate temperature (Tsub) lower than 400 °C for monolithic three-dimensional integrated circuits (3D-ICs). The detailed process verification of a low-defect GAA nanowire and electrical characteristics were investigated in this article. The GAA Si NW FETs, which were intentionally fabricated within the controlled Si grain, exhibit a steeper subthreshold swing (S.S.) of about 65 mV/dec., higher driving currents of 327 µA/µm (n-type) and 297 µA/µm (p-type) @ Vth ± 0.8 V, and higher Ion/Ioff (>105 @|Vd| = 1 V) and have a narrower electrical property distribution. In addition, the proposed Si NW FETs with a GAA structure were found to be less sensitive to Vth roll-off and S.S. degradation compared to the omega(Ω)-gate Si FETs. It enables ultrahigh-density sequentially stackable integrated circuits with superior performance and low power consumption for future mobile and neuromorphic applications.

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Section: Resultsmentioning

confidence: 99%