Coarse grained molecular dynamics model of block copolymer directed self-assembly

Lawson, Richard A.; Peters, Andrew J.; Ludovice, Peter J.; Henderson, Clifford L.

doi:10.1117/12.2021439

Cited by 21 publications

(16 citation statements)

References 27 publications

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“…5(a), it is self-evident that the spacer patterns can be readily generated by expanding the mandrel boundary by a distance of spacer thickness. In Table 2, we list the existing DSA pattern-generation models [9][10][11][12][13][14][15][16] and compare their predicting accuracy, computing speed and pattern generation capability. Only the geometric model and so-called "OK" model have the fullchip pattern generation capability.…”

Section: Pattern Generation Modelsmentioning

confidence: 99%

“…Despite the significant progress made in directed self-assembly (DSA) research [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17], the challenges of its insertion into high-volume semiconductor manufacturing are non-trivial. DSA is a cost-effective frequency multiplication process using pre-patterned templates, which is similar to self-aligned multiple patterning (SAMP [18][19][20][21][22][23][24][25][26][27][28][29][30][31]) based on mandrel and spacer engineering.…”

Section: Introductionmentioning

confidence: 99%

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Benchmarking process integration and layout decomposition of directed self-assembly and self-aligned multiple patterning techniques

et al. 2014

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In this paper, we present a benchmarking study of directed self-assembly (DSA) and self-aligned multiple patterning (SAMP) techniques for potential applications in manufacturing 10-nm (half-pitch) IC devices. Using the self-aligned quadruple patterning (SAQP) process as an example, we compare their process characteristics and complexity/costs, identify the integration challenges, and propose various patterning solutions for both BEOL and FEOL applications. Major differences in DSA and SAQP mask strategy, layout decomposition algorithm, and pattern-generation modeling are discussed, and critical requirements of overlay accuracy and CD control for implementing a DSA process in NAND wordline patterning are indentified. DSA technique is found to be a complementary solution for certain niche applications and we suggest that our industry should allocate more R & D resources to solve the 2-D SAMP layout decomposition challenges for logic BEOL patterning. We also propose an "out-of-the-box" idea of combining DSA and SADP process to significantly improve the 2-D design flexibility and develop a layout decomposition algorithm for this hybrid process.

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Section: Pattern Generation Modelsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Benchmarking process integration and layout decomposition of directed self-assembly and self-aligned multiple patterning techniques

et al. 2014

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“…A further discussion of these parameters can be found elsewhere. 23,25,26 Because ε AB describes the interaction between unlike blocks, this parameter is used to control the value of χ. To find χ, we follow experimental methods 27,28 and fit the structure factor (similar to an x-ray scattering profile) to Leibler's theory for BCP scattering.…”

Section: Coarse Grained Modelmentioning

confidence: 99%

“…A coarse grained polymer model has been used and is described in detail elsewhere, 23,24 but a brief description will be given here. Molecules are coarse-grained by modeling four monomeric units as a single bead.…”

Section: Coarse Grained Modelmentioning

confidence: 99%

Coarse-grained molecular dynamics modeling of the kinetics of lamellar BCP defect annealing

et al. 2015

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Directed self-assembly of block copolymers (BCPs) is a process that has received great interest in the field of nanomanufacturing in the past decade, and great strides towards forming high quality aligned patterns have been made. But state of the art methods still yield defectivities orders of magnitude higher than is necessary in semi-conductor fabrication even though free energy calculations suggest that equilibrium defectivities are much lower than is necessary for economic semi-conductor fabrication. This disparity suggests that the main problem may lie in the kinetics of defect removal. This work uses a coarse-grained model to study the rates, pathways, and dependencies of healing a common defect to give insight into the fundamental processes that control defect healing and give guidance on optimal process conditions for BCP-DSA. It is found that infinitely thick films yield an exponential drop in defect heal rate above χN ~ 30 . Below χN ~ 30, the rate of transport was similar to the rate at which the transition state was reached so that the overall rate changed only slightly. The energy barrier in periodic simulations increased with 0.31 χN on average. Thin film simulations show no change in rate associated with the energy barrier below χN ~ 50, and then show an increase in energy barrier scaling with 0.16χN. Thin film simulations always begin to heal at either the free interface or the BCPunderlayer interface where the increased A-B contact area associated with the transition state will be minimized, while the infinitely thick films must start healing in the bulk where the A-B contact area is increased. It is also found that cooperative chain movement is required for the defect to start healing.

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“…Previous modeling efforts included strong segregation theory, [23] Monte Carlo, [16] single-chain-in-mean-field, [19] and coarse-grained molecular dynamics. [24] Somewhat surprisingly, there has been little effort so far in applying selfconsistent field theory (SCFT) to study this problem, even though SCFT has been extensively applied to the related problem of lamellar morphologies in non-patterned thin films. [25][26][27][28] In this paper, we present our initial efforts to study chemoepitaxy DSA using SCFT.…”

Section: Introductionmentioning

confidence: 99%

Modeling Chemoepitaxy of Block Copolymer Thin Films using Self-Consistent Field Theory

Ginzburg

Weinhold

Hustad³

et al. 2013

J. Photopol. Sci. Technol.

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Directed self-assembly (DSA) of block copolymers (BCPs) is a promising technology for advanced patterning at future technology nodes. We use Self-Consistent Field Theory (SCFT) to model directed self-assembly (DSA) of PS-PMMA block copolymers on chemically patterned surfaces (chemoepitaxy). We consider the scenario in which the surface is covered by a neutral brush, in which PS-preferential guiding lines are written. The lines have width W and the period of the line pattern is denoted as P. After the DSA process, one expects to see a lamellar pattern with period (P/n), where n is the line multiplication factor. Using SCFT, we investigate the stability of the templated lamellar pattern as a function of (P/L 0 ) and (W/L 0 ), where L 0 is the bulk lamellar period. We find that the pattern is most stable if the guiding stripe pattern has a width which is slightly larger than the equilibrium lamellar half-period, and roughly corresponds to (W/L 0 ) = 0.5--0.6, in agreement with earlier studies. The stability of the pattern also depends on the multiplication factor, n; as n is increased, the free energy differences between various morphologies diminish, making the formation of defects more likely. This has significant impact on the practicality of chemoepitaxy for sub-30 nm line and space applications.

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Coarse grained molecular dynamics model of block copolymer directed self-assembly

Cited by 21 publications

References 27 publications

Benchmarking process integration and layout decomposition of directed self-assembly and self-aligned multiple patterning techniques

Benchmarking process integration and layout decomposition of directed self-assembly and self-aligned multiple patterning techniques

Coarse-grained molecular dynamics modeling of the kinetics of lamellar BCP defect annealing

Modeling Chemoepitaxy of Block Copolymer Thin Films using Self-Consistent Field Theory

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