Colloidal PbS Quantum Dot Photodiode Imager with Suppressed Dark Current

Wang, Ya; Hu, Huicheng; Yuan, Mohan; Xia, Hang; Zhang, Xingchen; Liu, Jing; Yang, Ji; Xu, Shaoqiu; Shi, Zhaorong; He, Jungang; Zhang, Jianbing; Gao, Liang; Tang, Jiang; Lan, Xinzheng

doi:10.1021/acsami.3c12918

Cited by 14 publications

(3 citation statements)

References 44 publications

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“…We finally integrated our LiF-incorporated PbS CQD photodiodes with a 64 × 64 pixel array (a pixel size of 500 μm) of silicon-based TFT to fabricate a CQD TFT imager. As shown in Figure S9, the PbS CQD TFT imager was prepared according to previous methods . The imaging system of the PbS CQD TFT imager is schematically shown in Figure a.…”

Section: Resultsmentioning

confidence: 99%

Electrode Engineering of Colloidal Quantum Dot Photodetectors Using a Self-Assembled Island-like LiF Interfacial Layer

Wang,

Hu,

Ran

et al. 2024

ACS Photonics

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Lead sulfide (PbS) colloidal quantum dot (CQD) photodetectors (PDs) are promising devices for low-cost, high-performance, and large-area infrared imaging. To achieve commercial applications, it is necessary not only to further improve performance but also to achieve high stability. In this study, the uncontrolled migration of the Au element into the PbS CQD layers was identified. An interface passivation approach was employed, which involved the implementation of a self-assembled island-like LiF interfacial layer between the PbS-EDT layer and the Au electrode. The approach effectively mitigated the detrimental migration of the Au element and substantively enhanced the stability of PbS CQD PDs. At the same time, this strategy substantially suppressed the dark current in the PbS CQD PDs due to interface passivation, which led to more than 2-fold improvements of the specific detectivity to 4.8 × 1012 Jones. A PbS CQD photodiode imager based on the thin-film transistor readout circuit was finally fabricated. Penetration imaging and material discrimination imaging were demonstrated successfully by the PbS CQD imager.

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Section: Resultsmentioning

confidence: 99%

Electrode Engineering of Colloidal Quantum Dot Photodetectors Using a Self-Assembled Island-like LiF Interfacial Layer

Wang,

Hu,

Ran

et al. 2024

ACS Photonics

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“…Moreover, the absorption spectrum of QDs can be readily tuned across the infrared by adjusting the QD size and utilizing different materials. Photodetectors made from PbS, [20][21][22][23] HgTe, 24,25 Ag 2 Se, 26,27 or InAs 28 QDs have all shown sensitivity for short-wave and mid-wave infrared light.…”

Section: Article Pubsaiporg/aip/appmentioning

confidence: 99%

A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 µm

Pang,

Deng,

Kheradmand

et al. 2024

APL Photonics

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Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 µm wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots present a promising solution here, offering distinct advantages, such as infrared wavelength tunability, cost-effectiveness, and facile deposition. Their unique properties position them as a potential candidate for enabling photodetection in silicon photonics beyond the conventional telecom wavelength, thereby expanding the potential applications and capabilities within this domain. In this study, we have successfully integrated lead sulfide (PbS) colloidal quantum dot photodiodes (QDPDs) onto silicon waveguides using standard process techniques. The integrated photodiodes exhibit a remarkable responsivity of 1.3 A/W (with an external quantum efficiency of 74.8%) at a wavelength of 2.1 µm, a low dark current of only 106 nA, and a bandwidth of 1.1 MHz under a −3 V bias. To demonstrate the scalability of our integration approach, we have developed a compact 8-channel spectrometer incorporating an array of QDPDs. This achievement marks a significant step toward realizing a cost-effective photodetector solution for silicon photonics, particularly tailored for a wide range of sensing applications around the 2 µm wavelength range.

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“…Infrared technology is of great interest for a wide range of applications, such as industrial inspection, thermal imaging, smart driving assistance, and remote sensing. − Infrared photodetectors based on bulk semiconductor materials, like InGaAs and HgCdTe, exhibit both high sensitivity and fast response . However, the epitaxy growth process of single-crystalline materials makes them expensive .…”

mentioning

confidence: 99%

Synergism in Binary Nanocrystals Enables Top-Illuminated HgTe Colloidal Quantum Dot Short-Wave Infrared Imager

Wang,

Yuan,

Liu

et al. 2024

Nano Lett.

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Thanks to their tunable infrared absorption, solution processability, and low fabrication costs, HgTe colloidal quantum dots (CQDs) are promising for optoelectronic devices. Despite advancements in device design, their potential for imaging applications remains underexplored. For integration with Si-based readout integrated circuits (ROICs), top illumination is necessary for simultaneous light absorption and signal acquisition. However, most high-performing traditional HgTe CQD photodiodes are pon-n stack and bottom-illuminated. Herein, we report topilluminated inverted n-on-p HgTe CQD photodiodes using a robust p-type CQD layer and a thermally evaporated Bi 2 S 3 electron transport layer. The p-type CQD solid is achieved by exploring the synergism in binary HgTe and Ag 2 Te CQDs. These photodetectors show a room-temperature detectivity of 3.4 × 10 11 jones and an EQE of ∼44% at ∼1.7 μm wavelength, comparable to the p-on-n HgTe CQD photodiodes. A top-illuminated HgTe CQD short-wave infrared imager (640 × 512 pixels) was fabricated, demonstrating successful infrared imaging.

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Colloidal PbS Quantum Dot Photodiode Imager with Suppressed Dark Current

Cited by 14 publications

References 44 publications

Electrode Engineering of Colloidal Quantum Dot Photodetectors Using a Self-Assembled Island-like LiF Interfacial Layer

Electrode Engineering of Colloidal Quantum Dot Photodetectors Using a Self-Assembled Island-like LiF Interfacial Layer

A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 µm

Synergism in Binary Nanocrystals Enables Top-Illuminated HgTe Colloidal Quantum Dot Short-Wave Infrared Imager

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