Comment on “Modification of graphene properties due to electron-beam irradiation” [Appl. Phys. Lett. 94, 013101 (2009)]

Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation

“…Raman and Auger electron spectroscopy have shown that e-beam irradiation can selectively remove graphene layers and induce chemical reactions and structural transformations [20,21]. The interaction of an e-beam with water adsorbates on the graphene surface has been also proposed for the hydrogenation of graphene [25,26]. However, Raman spectroscopy is unable to reveal all the effects of e-beam irradiation, and electrical measurements are needed to check for possible modifications of transport properties.…”

Patterning 2D materials for devices by mild lithography

“…43 Regardless of the precise origin of the defects, we observe that the intensity of the D mode can be reduced to its original value by vacuum annealing as described in the literature. 5,9,11 Accordingly, we annealed the samples evaluated in Fig. 2 at 300 C and 1 Â 10 À6 mbar for 30 min as well, to be able to compare our results with the literature.…”

“…38 The second possible type would be due to the partial hydrogenation of graphene in the EBL process, which also leads to the emergence of an intense D mode. 5,8,9,39 The hydrogen necessary may be provided by the PMMA in this case. In contrast, the knock-on displacement of carbon atoms can be excluded as a possible cause of defect formation.…”

“…Regardless of the different nature of the interaction between photons and electrons with matter, even signicantly lower energies of the corresponding particles would already be sufficient not only to expose the resist but also to alter or damage the sample itself. The danger of inducing damage in the structuring process is especially high for the so-called 2D materials, [4][5][6][7][8][9][10][11][12][13][14][15] which are extremely delicate due to their ultimate surface-tovolume ratio and the resulting strong dependence of their physical properties on the surface defect density. [16][17][18][19][20] To address this issue, we present a method that allows us to structure the resist mask without exposing the delicate sample to UV light or an electron beam.…”

Nano-structure and property transformations of carbon systems under γ-ray irradiation: a review

“…142 It also works as the mediator to produce graphene. A literature survey shows that some irradiation techniques have been applied to modify the properties of graphene, such as electron irradiation, [143][144][145][146][147][148][149] ion irradiation 150,151 and et al In our previous work, alterations of the structure and functional groups of graphene and GO induced by electron beam irradiation were investigated. 152,153 c-Rays have been proved to be more effective than electron and ion beams and irradiation with c-rays should have great potential for produce unimaginable functionalizations on graphene and GO.…”