Commercial Light Emitting Diodes Sensitivity to Protons Radiations: IEEE Radiation Effects Data Workshop Record

Boutillier, M.; Gilard, O.; Quadri, Gianandrea; Lhuillier, Sébastien; How, Lip Sun; Hernandez, S.

doi:10.1109/redw.2014.7004557

Cited by 4 publications

(3 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar trends were observed in [17]. Boutillier et al [18], it has been assessed how well LEDs resist displacement damage. Almost all the tested samples' output power was sustained up to 2.5×1015 cm -2 (50 MeV).…”

Section: Introductionsupporting

confidence: 55%

Effect of proton radiation on gallium nitride light emitting diodes

Baba,

Husni,

Saidin

et al. 2024

Bulletin EEI

View full text Add to dashboard Cite

The compound semiconductor gallium nitride offers enormous potential for facilitating economic expansion in the silicon-based semiconductor industry, which is currently seeing decreasing performance returns compared to investment costs. Its high electron mobility and electric field strength at the material level have already demonstrated enormous potential for photonics and high-frequency communications applications. However, its application in devices used in the radiation-prone environment is hindered by degradation and failure caused by the radiation. In this paper, the effect of proton radiation on the electrical properties of InGaN light emitting diodes (LEDs) for the fluence range of 1×1014 cm-2 to 3×1014 cm-2 is performed. On comparing the results before and after radiation, it is found that radiation mainly affected the reverse IV characteristics of the device with little or no effect on forward IV or CV characteristics. Apart from the electric properties, the optical properties of the LEDs show improvement after radiation as the light intensity increases post-irradiation.

show abstract

Section: Introductionsupporting

confidence: 55%

Effect of proton radiation on gallium nitride light emitting diodes

Baba,

Husni,

Saidin

et al. 2024

Bulletin EEI

View full text Add to dashboard Cite

show abstract

“…Nonetheless, only two works have so far considered phosphor-converted white LEDs: Ref. 22, in which however only low-power devices were tested and modest fluences were achieved (with no damage detected), and Ref. 23, in which γ-rays were used as radiation source; however, γ-rays are not representative of the CERN tunnel radiation environment, 3) and are not effective in inducing displacement damage (degradation in LED dies was limited even at 1 MGy).…”

mentioning

confidence: 99%

Modelling of proton irradiated GaN-based high-power white light-emitting diodes

Floriduz

Devine

2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We report the effects of high-energy (23 GeV) proton irradiation at large fluences on packaged high-power GaN-based white light-emitting diodes with YAG:Ce phosphors. From optical and electrical measurements, we assume that proton irradiation degrades only the GaN LED die up to fluences of at least 2 ' 10 14 p/cm 2 , and we demonstrate that it produces nonradiative recombination centres which increase the leakage current and diminish the carrier density in the quantum wells and hence the output optical power. We also propose for the first time a model correlating optical and electrical degradation induced by radiation.

show abstract

“…Some are "high power" (0.5 W) white LEDs to be used while driving, while others are colour LEDs of specific bandwidths to allow for multispectral imaging. These colour LEDs are the Epitex L590-09, the USHIO L720-2AU and the EOLD-880-525 at, respectively, 590 nm, 720 nm and 880 nm (Boutillier et al 2014).…”

Section: Science With the Wheel Cameras (Wheelcams)mentioning

confidence: 99%

The MMX rover: performing in situ surface investigations on Phobos

Michel

Ulamec

Böttger

et al. 2022

Earth Planets Space

View full text Add to dashboard Cite

The Japanese MMX sample return mission to Phobos by JAXA will carry a rover developed by CNES and DLR that will be deployed on Phobos to perform in situ analysis of the Martian moon’s surface properties. Past images of the surface of Phobos show that it is covered by a layer of regolith. However, the mechanical and compositional properties of this regolith are poorly constrained. In particular, from current remote images, very little is known regarding the particle sizes, their chemical composition, the packing density of the regolith as well as other parameters such as friction and cohesion that influence surface dynamics. Understanding the properties and dynamics of the regolith in the low-gravity environment of Phobos is important to trace back its history and surface evolution. Moreover, this information is also important to support the interpretation of data obtained by instruments onboard the main MMX spacecraft, and to minimize the risks involved in the spacecraft sampling operations. The instruments onboard the Rover are a Raman spectrometer (RAX), an infrared radiometer (miniRad), two forward-looking cameras for navigation and science purposes (NavCams), and two cameras observing the interactions of regolith and the rover wheels (WheelCams). The Rover will be deployed before the MMX spacecraft samples Phobos’ surface and will be the first rover to drive on the surface of a Martian moon and in a very low gravity environment. Graphic Abstract

show abstract

Commercial Light Emitting Diodes Sensitivity to Protons Radiations: IEEE Radiation Effects Data Workshop Record

Cited by 4 publications

References 12 publications

Effect of proton radiation on gallium nitride light emitting diodes

Effect of proton radiation on gallium nitride light emitting diodes

Modelling of proton irradiated GaN-based high-power white light-emitting diodes

The MMX rover: performing in situ surface investigations on Phobos

Contact Info

Product

Resources

About