2002
DOI: 10.1016/s0040-6090(02)00254-7
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Comparative analysis for the crystalline and ferroelectric properties of Pb(Zr,Ti)O3 thin films deposited on metallic LaNiO3 and Pt electrodes

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Cited by 88 publications
(40 citation statements)
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“…The grain size of the BTO film on LNO electrode was about 130 nm, which was smaller than 180 nm of the BTO film on Pt electrode. This was consistent with the literature [18], and Chae et al also found that the grain size of the PZT film deposited on LNO electrode was smaller than that of the film on Pt electrode [13]. of the BTO/LNO film showed obvious frequency dependence.…”
Section: Resultssupporting
confidence: 92%
See 1 more Smart Citation
“…The grain size of the BTO film on LNO electrode was about 130 nm, which was smaller than 180 nm of the BTO film on Pt electrode. This was consistent with the literature [18], and Chae et al also found that the grain size of the PZT film deposited on LNO electrode was smaller than that of the film on Pt electrode [13]. of the BTO/LNO film showed obvious frequency dependence.…”
Section: Resultssupporting
confidence: 92%
“…Particularly, highly textured PZT films were obtained on (1 0 0)-oriented LNO substrates by the sol-gel technique and showed great improvement in polarization fatigue [9]. At present, many preparation techniques, such as pulsed laser deposition (PLD) [8], metalorganic decomposition (MOD) [10], sol-gel [11], RF magnetron sputtering [12,13] have been used to prepare ferroelectric thin films on perovskite oxides bottom electrodes. Recently, mist plasma evaporation (MPE) has been developed by us to prepare ferroelectric thin films.…”
Section: Introductionmentioning
confidence: 99%
“…These authors reported that BST thin films with LSCO buffer layers had a smoother surface and a smaller grain size than thin film buffer layers on Pt substrates. Chae et al [37] researched PZT thin films grown on Pt/Ti/SiO 2 /Si substrates with and without LaNiO 3 (LNO) buffers layers by the sol-gel technique and revealed that the PZT thin film average grain size on LNO buffers layers is smaller than that of the grain size on metal electrode (platinum substrate) films; this result is consistent with our results.…”
Section: Resultssupporting
confidence: 91%
“…Because the lattice mismatch of the atom arrangements between (1 1 1) plane of PZT and (1 1 1) plane of Pt is only 2.8% [20], (1 1 1) texture in PZT film can be induced by (1 1 1) oriented Pt substrate. In addition, (1 0 0) texture has also been found on (1 1 1)-oriented Pt substrate by some authors [21][22][23], which suggests that the (1 0 0) PZT //(1 1 1) Pt is possible in point of interface energy.…”
Section: Phase Composition and Texturementioning
confidence: 72%