Comparative analysis of hydrogen sensing based on treated-TiO2 in thick film gas sensor

ZnIn2S4 Nanosheets for Efficient NO2 Detection at Room Temperature: Insights into the Role of Sulfur Vacancies

“…The limit of 1 h average concentration of NO 2 in the ambient air quality standard is 0.2 ppm . At present, metal oxide semiconductor (MOS) materials such as ZnO, , In 2 O 3 , , SnO 2 , TiO 2 , and NiO are widely used for NO 2 sensing. Although these MOS have high response, they still suffer from high operating temperature, ,− which greatly limits their potential application in low-power devices.…”