2015
DOI: 10.1016/j.microrel.2015.09.012
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Comparative evaluation of the short-circuit withstand capability of 1.2kV silicon carbide (SiC) power transistors in real life applications

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Cited by 26 publications
(10 citation statements)
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“…However, references [6] - [9] can be noted. In [6], an electrothermal modelling is proposed to estimate the junction temperature of planar and trench devices just before failure; in [7], a very interesting correlation is proposed between the thermal dynamics at the top of the die and the type of failure; in [8], a parametric study of the short-circuit robustness to failure is proposed and in [9], elements of physical understanding on the origin of the thermal runaway leading to a destructive latch-up effect is proposed. Note finally that technological analysis of the destruction are even less studied in literature justify why we present at the end of the article some elements from ours tests.…”
Section: Introductionmentioning
confidence: 99%
“…However, references [6] - [9] can be noted. In [6], an electrothermal modelling is proposed to estimate the junction temperature of planar and trench devices just before failure; in [7], a very interesting correlation is proposed between the thermal dynamics at the top of the die and the type of failure; in [8], a parametric study of the short-circuit robustness to failure is proposed and in [9], elements of physical understanding on the origin of the thermal runaway leading to a destructive latch-up effect is proposed. Note finally that technological analysis of the destruction are even less studied in literature justify why we present at the end of the article some elements from ours tests.…”
Section: Introductionmentioning
confidence: 99%
“…Here a short circuit detection is added to a typical driver design. Furthermore, the robustness of 1200V N-ON SiC JFETs against short circuit were examined via experimental parametric analysis and 3-dimensional thermal model simulations in [50]. Merits of this report included presentation of a more accurate and realistic analysis of short circuits outside the power converter where a large stray inductance exists.…”
Section: E Sic Jfet Application In Short Circuit Detectionmentioning
confidence: 99%
“…In recent years, SiC power MOSFETs with excellent static and dynamic performances became commercially available [3] [4]. In addition to this, efforts were made in studying their short circuit ruggedness [5] [6] [7], which is a common automotive requirement. However, in order to exploit them in the transportation sector, it is necessary that they reach the current ratings required by the various application areas, which span from few hundred Amperes of road vehicles to several thousands of electric trains.…”
Section: Introductionmentioning
confidence: 99%