Comparative investigation on electronic properties of metal-semiconductor structures with variable ZnO thin film thickness for sensor applications

Çіçek, Osman; Kurnaz, Sedat; Bekar, Atakan; Öztürk, O.

doi:10.1016/j.compositesb.2019.106987

Cited by 11 publications

(3 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, the number of trapped charges at grain boundaries increased with the increment of thickness (t), which raise the R s at the grain boundary region. 47) Therefore, further increment of t has a low effect on the electrical parameters. At the saturated state, the accumulated charges near the surface hinder the flow of electrons by grain boundaries (m gb ).…”

Section: Resultsmentioning

confidence: 99%

Fabrication of inverted ZnCuInS/ZnS based quantum-dot light-emitting diodes with the non-stoichiometric ZnO layers

Biswas

Hossain

Okada

2021

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The performance of the Cd-free quantum-dot light-emitting diode was investigated using un-doped and non-stoichiometric sputtered ZnO. Highly conductive metallic ZnO was sputtered with the presence of pure argon (Ar) gas, where the thickness was varied to enhance the structural, morphological, and electrical properties. The electrical properties of the fabricated ZnO were measured using the Hall measurement technique. Consequently, the device performance was validated by the mobility and carrier concentration of the sputtered ZnO film. In addition, from the X-ray diffraction analysis, it was confirmed that the ZnO film was grown on c(002)-axis orientation, parallel to the substrate surface. The morphological properties were also observed using a field-emission-scanning electron microscope to integrate with the crystalline growth conditions of XRD analysis. The external quantum efficiency of 1.02% and current efficiency of 1.86 cd A−1 were achieved with the mobility of 15.1 cm2 V−1 s−1 and carrier concentration of 2.94 × 1020 cm−3 of the ZnO film.

show abstract

Section: Resultsmentioning

confidence: 99%

Fabrication of inverted ZnCuInS/ZnS based quantum-dot light-emitting diodes with the non-stoichiometric ZnO layers

Biswas

Hossain

Okada

2021

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Using different methods (i.e. thermionic emission (TE) theory, Cheung function and modified Norde's methods), the mentioned parameters were obtained from the current-voltage (I-V) characteristics and compared with each other [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Physical and electrical properties of Al/Nb2O5 thin film Schottky diode for UV-A applications

Ataşer,

Sönmez,

Asar

et al. 2024

Preprint

View full text Add to dashboard Cite

Nb2O5 thin films were deposited through sol-gel technique and then the films were annealed at temperature 300, 400, 500 and 600°C. The effect of annealing temperatures on the physical properties of the films was analyzed by several characterization techniques. Secondary ion mass spectroscopy analysis results indicated that uniform Nb and O distribution have formed throughout depth of the films deposited on substrates. The Atomic Force Microscope results observed that the increased temperature has resulted in increasing the surface roughness from 1.07 to 4.58 nm. The energy band gap (3.67–3.51 eV) was determined to be decrease with increase the annealing temperature. Therefore, considering the results of the both as-deposited at 150 ˚C and annealed films, it is clearly seen that as-deposited at 150 ˚C film has most uniform depth, a homogeneous surface and the highest optical band gap (at UV-A region). Therefore, the Al/Nb2O5 Schottky diode was fabricated based on the as-deposited film. The current-voltage (I-V) characteristics of the diode were measured at room temperature and detail discussed. It has been observed that the diode has exhibited good rectifying behavior. The obtained experimental results showed that the as deposited Nb2O5 thin film can be used in UV-A electro-optical applications.

show abstract

“…This may result in the destruction of the layer (Dang et al, 2017;Shejko et al, 2017;Chen et al, 2018;Xu et al, 2018;Ishitani et al, 2018;Bojita et al, 2018). When estimating joint efficiency, one has to take into account the physical characteristics of soldered elements as well as their geometric sizes and temperature modes of their operation (Sirazijeva et al, 2004, Li et al, 2016Skvortsov et al, 2016;Mailman et al, 2017;Romashevskiy et al, 2018;Voss et al, 2018;Çiçek et al, 2019).…”

Section: Introductionmentioning

confidence: 99%

Deflected State of Semiconductor Near-Contact Region at Electrodegradation of Metallization Track on Its Surface

Скворцов¹,

Koryachko²,

Voloshinov³

2019

PTQ

View full text Add to dashboard Cite

It is well known that a nonhomogeneous state of stress occurs in compounds of dissimilar materials upon heating. Uon the assessment of the strength of the joints, it is necessary to factor in the physical specifications of the soldered elements, the geometric dimensions and temperature conditions of their operation. The purpose of the research was to perform the stress-strain state analysis of the contact zone of a semiconductor upon electrodegradation of a metallization track on its surface. Thin-film metal-semiconductor structures were researched. As substrates, it was used phosphorus-doped silicon single-crystal wafers oriented in the (111) and (100) directions, with a resistivity in the range p = 1 ... 0.01 Ω.cm, and a 30 ... 50 μm n-epitaxial layer was deposited on a part of the wafers. As a conductive metal film, aluminum 1 ... 2 μm thick was used. The test structure was formed by optical photolithography. The oscillograms of the U(t) inclusion in the process of passage of the current pulse were taken by the corresponding probes from potential sites and recorded by a digital storage oscilloscope. An estimation procedure for the semiconductor stressed region at local surface heating of a metallized surface area with electric pulse was given. The calculated size of deformed silicon substrate region was compared with the experimental one under passage of square electric pulses. It was estimated the deflected region that depends on duration and amplitude of electric pulse. A considerable nonuniformity of the metallization track after electric pulse passage was fixed experimentally.

show abstract

Comparative investigation on electronic properties of metal-semiconductor structures with variable ZnO thin film thickness for sensor applications

Cited by 11 publications

References 22 publications

Fabrication of inverted ZnCuInS/ZnS based quantum-dot light-emitting diodes with the non-stoichiometric ZnO layers

Fabrication of inverted ZnCuInS/ZnS based quantum-dot light-emitting diodes with the non-stoichiometric ZnO layers

Physical and electrical properties of Al/Nb2O5 thin film Schottky diode for UV-A applications

Deflected State of Semiconductor Near-Contact Region at Electrodegradation of Metallization Track on Its Surface

Contact Info

Product

Resources

About