Comparative study of absorption and photoluminescent properties of organic solar cells based on P3HT:PCBM and P3HT:ITIC blends

Zakhidov, E. A.; Imomov, Mukhib; Quvondikov, Vakhob; Нематов, Ш. К.; Tajibaev, Ilkhom; Saparbaev, Aziz; Ismail, Irfan; Shahid, Bilal; Yang, Renqiang

doi:10.1007/s00339-019-3100-0

Cited by 13 publications

(13 citation statements)

References 35 publications

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“…The high overall recombination rate, K, i.e., the sum of Kr and Knr, of the OSCs based on P3HT:NFA could be a result of the very small phase separation between the donor and the acceptor materials in the active layer, as is pointed out in the literature 29,31,35 . However, as discussed above, the small phase separation should lead to high Kr and high Knr.…”

Section: High Vloss In Oscs Based On P3ht:nfamentioning

confidence: 78%

“…, is very poor, with PCE generally lower than 2% [29][30][31] . This was not only due to the high Vloss, associated with the misaligned energy levels, but also related to the low Jsc caused by high quantum efficiency (QE) losses in the device.…”

Section: Introductionmentioning

confidence: 98%

“…The development of NFAs, in principle, paves the way for the use of P3HT for highly efficient PV energy conversion, since absorption strength of NFAs is generally high, and it can be engineered to cover a wide range of the solar spectrum 22,29 . However, the performance of the P3HT solar cells based on the most commonly used NFA materials, including ITIC and 2,2'-((2Z,2'Z)-((12,13-bis(2-ethylhexyl)-3,9-diundecyl-12,13-dihydro [1,2,5]thiadiazolo [3,4-…”

Section: Introductionmentioning

confidence: 99%

“…This was not only due to the high Vloss, associated with the misaligned energy levels, but also related to the low Jsc caused by high quantum efficiency (QE) losses in the device. In addition, the low external quantum efficiency of electroluminescence (EQEEL), causing high nonradiative recombination voltage losses (∆Vnr), further limits the Voc of the P3HT:NFA OSCs 22,29,31,32 . Although additional acceptor materials, such as IDTBR 33 , BTA1 26 , and TrBTIC 23 , have been developed for the solar cells based on P3HT, allowing to achieve increased device QE, the overall performance of the P3HT based OSCs is still much worse, as compared to that of the state-of-the-art OSCs, due to the higher Vloss 6,9,34 .…”

Section: Introductionmentioning

confidence: 99%

“…Recently, it has been demonstrated that the poor performance of the P3HT based OSCs could be ascribed to the high miscibility between P3HT and NFA, leading to too-small phase separation between the donor and the acceptor molecules in the photoactive layer 29,31,35 . The too-small phase separation could lead to fast recombination loss of charge carriers, thus limit both the Jsc and the fill factor (FF) of the solar cell 31,36 .…”

Section: Introductionmentioning

confidence: 99%

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Quantum Efficiency and Voltage Losses in P3HT: Non-fullerene Solar Cells

Xu¹,

Wu²,

Liang³

et al. 2022

Acta Physico Chimica Sinica

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From the industrial perspective, poly(3-hexylthiophene) (P3HT) is one of the most attractive donor materials in organic photovoltaics. The large bandgap in P3HT makes it particularly promising for efficient indoor light harvesting, a unique advantage of organic photovoltaic (PV) devices, and this has started to gain considerable attention in the field of PV technology. In addition, the up-scalability and long material stability associated with the simple chemical structure make P3HT one of the most promising materials for the mass production of organic solar cells. However, the solar cells based on P3HT has a low power conversion efficiency (PCE), which is less than 11%, mainly due to significant voltage losses. In this study, we identified the origin of the high quantum efficiency and voltage losses in the P3HT:non-fullerene based solar cells, and we proposed a strategy to reduce the losses. More specifically, we observed that: 1) the non-radiative decay rate of the charge transfer (CT) states formed at the donor-acceptor interfaces was much higher for the P3HT:nonfullerene solar cells than that for the P3HT:fullerene solar cells, which was the main reason for the more severely limited photovoltage; 2) the origin of the high non-radiative decay rate in the P3HT:non-fullerene solar cell could be ascribed to the short packing distance between the P3HT and non-fullerene acceptor molecules at the donor-acceptor interfaces (DA distance), which is a rarely studied interfacial structural property, highly important in determining the decay rate of CT states; 3) the lower voltage loss in the state-of-the-art P3HT solar cell based on the 2,2'- ((12,13-bis(2-butyldecyl)-3,9diundecyl-12,13-dihydro-[1,2,5]-thiadiazolo[3,4-e]thieno[2'',3'':4',5']thieno[2',3':4,5]p-yrolo[3,2-g]thieno [2',3':4,5]thieno [3,2b]indole-2,10-diyl)bis(methanelylidene))bis(5,6-dichloro-1H-indene-1,3(2H)-dion-e) (ZY-4Cl) acceptor could be associated with the better alignment of the energy levels of the active materials and the longer DA distance, compared to those based on the commonly used acceptors. However, the DA distance was still very short, limiting the device voltage. Thus, improving the performance of the P3HT based solar cells requires a further increase in the DA distance. Our findings are expected to pave the way for breaking the performance bottleneck of the P3HT based solar cells.

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Section: High Vloss In Oscs Based On P3ht:nfamentioning

confidence: 78%

Section: Introductionmentioning

confidence: 98%