“… Figure 1: Contraction and Expansion of the SCR of a MOSFET [2]; reprinted with permission from Elsevier.…”
Section: General Discussion Of Optical Techniques Used In Failure Anamentioning
confidence: 99%
“… Figure 2: LVI and LVP test setups, left and right, respectively. On the left, the beam is scanned over a region of interest to produce the LVI image, whereas on the right the beam is fixed at * to track the variations in the SCR [2]; reprinted with permission from Elsevier.…”
Section: General Discussion Of Optical Techniques Used In Failure Anamentioning
confidence: 99%
“…Although LADA [3] can be used as a back-side technique, it is more effective on the front side if the failure is associated with metal interconnects. Unlike LVI and LVP, which are used to monitor transistor behavior, the laser in LADA is used to alter to produce the LVI image, whereas on the right the beam is fixed at * to track the variations in the SCR [2]; reprinted with permission from Elsevier. emission at various clock frequencies, a threshold frequency was clearly demonstrated (Figure 4).…”
Section: General Discussion Of Optical Techniques Used In Failure Anamentioning
Failure analysis is important in determining root cause for appropriate corrective action. In order to perform failure analysis of microelectronic application-specific integrated circuits (ASICs) delidding the device is often required. However, determining root cause from the front side is not always possible due to shadowing effects caused by the ASIC metal interconnects. Therefore, back-side polishing is used to reveal an unobstructed view of the ASIC silicon transistors. This paper details how back-side polishing in conjunction with laser-scanned imaging (LSI), laser voltage imaging (LVI), laser voltage probing (LVP), photon emission microscopy (PEM), and laser-assisted device alterations (LADA) were used to uncover the root cause of failure of two ASICs.
“… Figure 1: Contraction and Expansion of the SCR of a MOSFET [2]; reprinted with permission from Elsevier.…”
Section: General Discussion Of Optical Techniques Used In Failure Anamentioning
confidence: 99%
“… Figure 2: LVI and LVP test setups, left and right, respectively. On the left, the beam is scanned over a region of interest to produce the LVI image, whereas on the right the beam is fixed at * to track the variations in the SCR [2]; reprinted with permission from Elsevier.…”
Section: General Discussion Of Optical Techniques Used In Failure Anamentioning
confidence: 99%
“…Although LADA [3] can be used as a back-side technique, it is more effective on the front side if the failure is associated with metal interconnects. Unlike LVI and LVP, which are used to monitor transistor behavior, the laser in LADA is used to alter to produce the LVI image, whereas on the right the beam is fixed at * to track the variations in the SCR [2]; reprinted with permission from Elsevier. emission at various clock frequencies, a threshold frequency was clearly demonstrated (Figure 4).…”
Section: General Discussion Of Optical Techniques Used In Failure Anamentioning
Failure analysis is important in determining root cause for appropriate corrective action. In order to perform failure analysis of microelectronic application-specific integrated circuits (ASICs) delidding the device is often required. However, determining root cause from the front side is not always possible due to shadowing effects caused by the ASIC metal interconnects. Therefore, back-side polishing is used to reveal an unobstructed view of the ASIC silicon transistors. This paper details how back-side polishing in conjunction with laser-scanned imaging (LSI), laser voltage imaging (LVI), laser voltage probing (LVP), photon emission microscopy (PEM), and laser-assisted device alterations (LADA) were used to uncover the root cause of failure of two ASICs.
“…Origins of EOP signal where recently exposed and described in previous works [3][4][5]. Various parameters have to be taken into account: free carrier's distribution and mobility, absorption coefficient and refractive index inside the semiconductor layers as well as external physical parameters such as the temperature and the applied voltage bias.…”
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