Comparison of saturator designs for delivery of low-volatility liquid precursors

Maslar, James E.; Kimes, William A.; Khromchenko, Vladimir B.; Sperling, Brent A.; Kanjolia, Ravindra K.

doi:10.1016/j.jcrysgro.2023.127102

Cited by 1 publication

(2 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In experiments with a similar deposition head, saturated currents of precursors were generated by flowing the carrier gas through bubblers, , which were then diluted before being delivered to the head (dilution ratios: 15 sccm of saturated TMA in 250 and 150 sccm of saturated H 2 O in 375 sccm). − Therefore, in the simulations, the partial pressures of TMA and H 2 O at the precursor inlet boundaries (Figure b) were assumed to be 100 and 1250 Pa, respectively, based on their saturated partial vapor pressure for 25 °C (temperature of the bubblers) obtained via the Antoine equation and the dilution of the precursor lines. Note that the values of precursor flow rate, which vary between 75 and 300 sccm (cm 3 /min at standard conditions), correspond to the sum of the TMA/H 2 O flow rate and carrier gas flow rate in each individual channel (therefore, the total flow rate entering the head is the precursor flow rate multiplied by the number of channels).…”

Section: Methodsmentioning

confidence: 99%

“…The diffusion coefficients of TMA and H 2 O at 200 °C were assumed to be 1.75 × 10 −5 and 5.53 × 10 −5 m 2 •s −1 , respectively. 43 In experiments with a similar deposition head, saturated currents of precursors were generated by flowing the carrier gas through bubblers, 44,45 which were then diluted before being delivered to the head (dilution ratios: 15 sccm of saturated TMA in 250 and 150 sccm of saturated H 2 O in 375 sccm). 46−48 Therefore, in the simulations, the partial pressures of TMA and H 2 O at the precursor inlet boundaries (Figure 1b) were assumed to be 100 and 1250 Pa, respectively, based on their saturated partial vapor pressure for 25 °C (temperature of the bubblers) obtained via the Antoine equation and the dilution of the precursor lines.…”

Section: Modeling Assumptions and Boundarymentioning

confidence: 99%

See 1 more Smart Citation

Can We Rationally Design and Operate Spatial Atomic Layer Deposition Systems for Steering the Growth Regime of Thin Films?

et al. 2023

View full text Add to dashboard Cite

Fine control over the growth of materials is required to precisely tailor their properties. Spatial atomic layer deposition (SALD) is a thin-film deposition technique that has recently attracted attention because it allows producing thin films with a precise number of deposited layers, while being vacuum-free and much faster than conventional atomic layer deposition. SALD can be used to grow films in the atomic layer deposition or chemical vapor deposition regimes, depending on the extent of precursor intermixing. Precursor intermixing is strongly influenced by the SALD head design and operating conditions, both of which affect film growth in complex ways, making it difficult to predict the growth regime prior to depositions. Here, we used numerical simulation to systematically study how to rationally design and operate SALD systems for growing thin films in different growth regimes. We developed design maps and a predictive equation allowing us to predict the growth regime as a function of the design parameters and operation conditions. The predicted growth regimes match those observed in depositions performed for various conditions. The developed design maps and predictive equation empower researchers in designing, operating, and optimizing SALD systems, while offering a convenient way to screen deposition parameters, prior to experimentation.

show abstract