Comparison of Surface Modifications by Wet and Dry Methods on Indium Tin Oxide Using Self-Assembled Monolayers

Jee, Seung Hyun; Kim, Soo Ho; Park, Hoon; Kim, Dong-Joo; Yoon, Young Soo

doi:10.1143/jjap.49.025701

Cited by 4 publications

(3 citation statements)

References 15 publications

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“…Finally, it is important to note that thin film coatings of ITO are technologically relevant for surface passivation, , elimination of charge barriers in diodes, ,, creation of electroactive layers, ,,− and sensing technologies. ,− The conditions for optimum conductivity, transparency, and plasmon resonance − of ITO films have been studied in great detail. This study adds to our understanding of ITO surface structure and the conditions necessary for optimizing SAM ordering on an ITO surface.…”

Section: Discussionmentioning

confidence: 99%

“…Finally, it is important to note that thin film coatings of ITO are technologically relevant for surface passivation, 10,12 elimination of charge barriers in diodes, 7,33,34 creation of electroactive layers, 18,19,35À37 and sensing technologies. 11,38À41 The conditions for optimum conductivity, 4 transparency, and plasmon resonance 42À44 of ITO films have been studied in great detail.…”

Section: ' Discussionmentioning

confidence: 99%

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Characterizing the Molecular Order of Phosphonic Acid Self-Assembled Monolayers on Indium Tin Oxide Surfaces

Losego¹,

Guske²,

Efremenko³

et al. 2011

Langmuir

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Self-assembled monolayers (SAMs) of alkanephosphonic acids with chain lengths between 8 and 18 carbon units were formed on thin films of indium tin oxide (ITO) sputter-deposited on silicon substrates with 400 nm thermally grown SiO(2). The silicon substrates, while not intended for use in near-IR or visible optics applications, do provide smooth surfaces that permit systematic engineering of grain size and surface roughness as a function of the sputter pressure. Argon sputter pressures from 4 to 20 mTorr show systematic changes in surface morphology ranging from smooth, micrometer-sized grain structures to <50 nm grains with 3× higher surface roughness. Near-edge X-ray absorption fine structure (NEXAFS) spectroscopy experiments are conducted for alkanephosphonic acids deposited on these wide range of ITO surfaces to evaluate the effects of these morphological features on monolayer ordering. Results indicate that long-chain SAMs are more highly ordered, and have a smaller tilt angle, than short-chain SAMs. Surprisingly, the 1-octadecyl phosphonic acids maintain their order as the lateral grain dimensions of the ITO surface shrink to ∼50 nm. It is only when the ITO surface roughness becomes greater than the SAM chain length (∼15 Å) that SAMs are observed to become relatively disordered.

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Section: Discussionmentioning

confidence: 99%

Section: ' Discussionmentioning

confidence: 99%

Characterizing the Molecular Order of Phosphonic Acid Self-Assembled Monolayers on Indium Tin Oxide Surfaces

Losego¹,

Guske²,

Efremenko³

et al. 2011

Langmuir

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show abstract

“…The work function modification can be achieved by SAM surface treatment due to its molecularly thin thickness and assembly reaction. This property ensures that the work function of the electrodes matches what can provide the desired energy band junction for each device [ 98 , 99 ]. The SAMs also improve the device stability.…”

Section: Discussionmentioning

confidence: 99%

Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers

Kim

Yoo

2021

Micromachines

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Self-assembled monolayers (SAMs), molecular structures consisting of assemblies formed in an ordered monolayer domain, are revisited to introduce their various functions in electronic devices. SAMs have been used as ultrathin gate dielectric layers in low-voltage transistors owing to their molecularly thin nature. In addition to the contribution of SAMs as gate dielectric layers, SAMs contribute to the transistor as a semiconducting active layer. Beyond the transistor components, SAMs have recently been applied in other electronic applications, including as remote doping materials and molecular linkers to anchor target biomarkers. This review comprehensively covers SAM-based electronic devices, focusing on the various applications that utilize the physical and chemical properties of SAMs.

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Ohmic contact between ZnO and Pt by InSb layer in a ZnO Schottky diode

Jee

Kakati

Lee

et al. 2011

Applied Physics Letters

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The surface of the ZnO thin films was modified by a thin InSb layer by using a thermal evaporator to increase the work function without altering the physical properties of the film. We expected that the InSb thin layer with a high work function could achieve the Ohmic contact between the ZnO and Pt electrodes by reducing an energy barrier due to increase in the ZnO thin film. The Ohmic contact was achieved in the interface between the ZnO and Pt electrodes by the InSb thin layer.

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Comparison of Surface Modifications by Wet and Dry Methods on Indium Tin Oxide Using Self-Assembled Monolayers

Cited by 4 publications

References 15 publications

Characterizing the Molecular Order of Phosphonic Acid Self-Assembled Monolayers on Indium Tin Oxide Surfaces

Characterizing the Molecular Order of Phosphonic Acid Self-Assembled Monolayers on Indium Tin Oxide Surfaces

Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers

Ohmic contact between ZnO and Pt by InSb layer in a ZnO Schottky diode

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