2012
DOI: 10.1016/j.cej.2012.09.081
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Comparison study of structural and optical properties of boron-doped and undoped graphene oxide films

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Cited by 95 publications
(35 citation statements)
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“…The peak at 190.2 eV corresponds to BÀCb onds in BC 3 structures, [31] and the high-energyp eaks at 190.8 and 191.8 eV could be ascribed to the BÀOb onds in BC 2 Oa nd BCO 2 structures, respectively. [27,32] Boron doped into CNTsc an break the hexagonal lattice of the graphitic shell and introduce more defects, and thusl eads to an increased I D /I G ratio in the Raman spectrum (Figure2).…”
Section: Resultsmentioning
confidence: 99%
“…The peak at 190.2 eV corresponds to BÀCb onds in BC 3 structures, [31] and the high-energyp eaks at 190.8 and 191.8 eV could be ascribed to the BÀOb onds in BC 2 Oa nd BCO 2 structures, respectively. [27,32] Boron doped into CNTsc an break the hexagonal lattice of the graphitic shell and introduce more defects, and thusl eads to an increased I D /I G ratio in the Raman spectrum (Figure2).…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, the two B1s states at low binding energy can be attributed to B-C bonds in different stoichiometry (B-rich and C-rich) as has been observed and discussed for B-doped carbon or boron carbide films [22,23] as well as in B-doped graphene layers [24,25].…”
Section: Page 9 Of 26mentioning
confidence: 86%
“…One concern about GO relative to pure graphene is the discontinuous bonding of carbon atoms due to hetero atoms or detects which often leads to less attractive properties than those of pure graphene. However, this can be compensated to some degree by partially reducing GO (rGO) [61,62] or doping with additional hetero atoms such as nitrogen, [63,64] boron [65] and/or fluorine [66] via chemical or thermal methods. In addition, porous structured GO can be prepared by partial reduction of GO because removal of oxygen often leaves pores behind.…”
Section: Sulfur-graphene (Oxide) Nanocompositesmentioning
confidence: 99%