Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

Zeng, Binjian; Xiao, Wenwu; Liao, Jiajia; Liu, Heng; Liao, Min; Peng, Qiangxiang; Zheng, Shuaizhi; Zhou, Yue

doi:10.1109/led.2018.2868275

Cited by 59 publications

(38 citation statements)

References 21 publications

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“…According to the results, the transfer curve obviously shifts to positive direction after program process (+5 V, 1s) and to negative direction after erase process (−5 V, 1s). The low operation voltage (program/erase operation: ± 5 V) is comparable with other works . For the synaptic device with 1 mg mL −1 Zn‐TCPP, the threshold voltage ( V T ) moves from −2.06 V (initial state) to −1.29 V under +5 V (programming), and then to −2.36 V under −5 V (erasing), leading to a memory window (Δ V T ) of 1.07 V. For the synaptic device with 2 mg mL −1 Zn‐TCPP, the V T moves from −1.71 V (initial state) to −0.51 V under +5 V (programming), and then to −1.95 V under −5 V (erasing), leading to a higher Δ V T (1.44 V).…”

Section: Resultssupporting

confidence: 78%

“…The diagrams consist of semiconductor layer (pentacene), tunneling layer (PVPy), and charge trapping layer (Zn‐TCPP nanosheets). According to previous works, the conduction band bottom (CBB) and VBM of PVPy are 2.8 and 6.2 eV, and the HOMO and LOMO levels of pentacene are 5.2 and 3.1 eV 9,21c. Based on the UPS and UV–vis results of Zn‐TCPP nanosheets in Figure d and Figure S11, Supporting Information, the VBM and CBB are measured to be about 5.1 and 3.1 eV.…”

Section: Resultsmentioning

confidence: 63%

“…On the contrary, smaller amounts of holes (larger amounts of electrons) from pentacene (Zn‐TCPP nanosheets) can be captured by MOF nanosheets (pentacene) under negative bias (Figure c). And the charge carriers tunneling mechanism may dominantly follow Fowler–Norheim tunneling 21c,22. The trapped carriers can create an internal electric field which can affect the threshold of our synaptic device.…”

Section: Resultsmentioning

confidence: 99%

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Synaptic Plasticity and Filtering Emulated in Metal–Organic Frameworks Nanosheets Based Transistors

Ding

Yang

Zhou

et al. 2019

Adv Elect Materials

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As a kind of structurally designable, nanoscale controllable, and performance optimizable materials, metal-organic frameworks (MOFs), consisting of organic ligands and metal nodes, have been widely studied as promising materials in a lot of fields over the last two decades, such as sensors, drug delivery, gas separation and storage, catalysis, and so on. [1] However, compared to these mature applications, the adoption of MOFs in emerging areas, such as information storage and processing, is relatively less. [1c,2] In order to expand the applied range of MOFs in new areas, designing and synthesizing new structure MOFs with novel properties, such as conducting and semiconducting characteristics, was recently used. [1c,3] The synthesis of new structure MOFs will lead to the relative high experimental cost and more complex synthesis process. Therefore, expanding the application of the pre-existing MOFs with high performance in emerging areas may be a more effective choice. In this information explosion era, data storage and processing is one of the most significant research field, and various functional materials have been used to develop high performance information storage and processing devices. [4] Up to now, MOFs have been used as active layer for developing nonvolatile memory (NVM), especially resistive random access memory (RRAM), [1c,5] which has been identified as one of the most potential developing direction for future non volatile data storage technique. [6] Moreover, compared with bulk MOFs, 2D MOFs show more attractive performance because they have ultrathin thickness, larger specific surface area, and more highly accessible active sites, and have attracted lots of research interest in the field of sensors, energy conversion and storage, biomedicine, gas separation, and electronic devices. [7] In these 2D MOF materials, M-TCPP (M: metal; TCPP: tetrakis(4carboxyphenyl)porphyrin) nanosheets have been used in biological detection, photocatalysis, RRAM, and other fields due to their simple synthetic process, uniform size, and proper thickness. [8,9] Due to the low information communication rate between central processing unit and main memory, the traditional von Two-dimensional (2D) metal-organic frameworks (MOFs) are widely used in a variety of mature applications, including catalysis, drug delivery, and sensors. Based on their highly accessible active sites, 2D MOFs are expected to be good charge trapping elements. Using 2D MOF, Zn-TCPP (TCPP: tetrakis(4-carboxyphenyl)porphyrin), as charge trapping materials by a simple solution process, a three-terminal synaptic device which can realize the learning functions and signal transmission simultaneously is firstly fabricated. The as-fabricated synaptic device exhibits ambipolar charge carrier trapping performance, large current on /current off ratio (>10 3) and excellent endurance (500 cycle times). Moreover, the common biological synaptic behaviors, including postsynaptic current under different temperature, pulse duration time and pulse voltage, paired-pulse...

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Section: Resultssupporting

confidence: 78%

Section: Resultsmentioning

confidence: 63%

Section: Resultsmentioning

confidence: 99%

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Synaptic Plasticity and Filtering Emulated in Metal–Organic Frameworks Nanosheets Based Transistors

Ding

Yang

Zhou

et al. 2019

Adv Elect Materials

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“…Meanwhile, TaN/HZO/TaN and TaN/HZO/ZrO 2 /TaN capacitors were also fabricated to evaluate the ferroelectric properties of the HZO thin films. The polarization–voltage ( P–V ) hysteresis loops of the capacitors were measured using a Radiant Technologies RT66A ferroelectric test system, while the device characteristics of FeFETs were measured by an Agilent B1500A semiconductor device analyzer with a pulse generator unit (B1525A) [20]. Two main test sequences used for MW and endurance measurements are shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

et al. 2019

Self Cite

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The HfO 2 -based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory. Although the retention performance of the HfO 2 -based FeFET with a MFIS gate stack could satisfy the requirements for practical applications, its memory window (MW) and reliability with respect to endurance should be further improved. This work investigates the advantage of employing ZrO 2 seed layers on the MW, retention, and endurance of the Hf 0.5 Zr 0.5 O 2 (HZO)-based FeFETs with MFIS gate stacks, by using fast voltage pulse measurements. It is found that the HZO-based FeFET with a ZrO 2 seed layer shows a larger initial and 10-year extrapolated MW, as well as improved endurance performance compared with the HZO-based FeFET without the ZrO 2 seed layer. The results indicate that employing of a direct crystalline high-k/Si gate stack would further improve the MW and reliability of the HfO 2 -based FeFETs.

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“…Future device design should encompass an optimized gate stack with larger HZO/SiO 2 ratio and a cross‐section with nanosheet shape and flat sidewalls. Furthermore, TiN or novel HfN [ 37 ] metal gate electrodes shall be adopted, for improved remanent polarization.…”

Section: Figurementioning

confidence: 99%

A Silicon Nanowire Ferroelectric Field‐Effect Transistor

Sessi

Simon

Mulaosmanovic

et al. 2020

Adv Elect Materials

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The end of classical scaling has become evident as manufacturing and design scaling reaches physical and economical limits. Already since many years, Moore´s law is complemented in semiconductor industry by the so-called "More-than-Moore" approach. [1] Here, a cost-effective integration of many additional functions into state-of-the-art complementary metaloxide-semiconductor (CMOS)-based technology escorts further reduction of the transistor dimension. For this purpose, alternative materials and new device concepts are being evaluated.

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Compatibility of HfN Metal Gate Electrodes With Hf_0.5Zr_0.5O₂ Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

Cited by 59 publications

References 21 publications

Synaptic Plasticity and Filtering Emulated in Metal–Organic Frameworks Nanosheets Based Transistors

Synaptic Plasticity and Filtering Emulated in Metal–Organic Frameworks Nanosheets Based Transistors

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

A Silicon Nanowire Ferroelectric Field‐Effect Transistor

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